Related papers: Amplicification of Voltage Controlled Magnetic Ani…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
The conventional computer architecture has been facing challenges answering the ever-increasing demands from emerging applications, such as AI, for energy-efficient computation and memory hardware systems. Computational Random Access Memory…
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that…
In crossbar array structures, which serves as an "In-Memory" compute engine for Artificial Intelligence hardware, write sneak path problem causes undesired switching of devices that degrades network accuracy. While custom crossbar…
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is…
Voltage control of magnetic anisotropy (VCMA) induced by charge accumulation is typically considered as an ultrafast process, enabling energy-efficient and high-speed magnetization switching in spintronic devices. In this work, we…
Voltage-controlled magnetic anisotropy (VCMA) offers an emerging approach to realize energy-efficient magnetization switching in spintronic devices such as magnetic random access memories (MRAMs). Here, we show that manipulating the…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
By integrating the local voltage-controlled magnetic anisotropy (VCMA) effect, Dzyaloshinskii-Moriya interaction (DMI) effect, and spin-orbit torque (SOT) effect, we propose a novel device structure for field-free magnetic tunnel junction…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switching energy. However, the requirement of an external magnetic…
Strain-controlled modulation of the magnetic switching behavior in magnetic tunnel junctions (MTJs) could provide the energy efficiency needed to accelerate the use of MTJs in memory, logic, and neuromorphic computing, as well as an…
Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. The magnetic tunnel junction (MTJ) has been studied as an RNG due to its thermally-driven…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…
Voltage controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets, promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…