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Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the NDR effects exhibited, switching operations…
Recent thermodynamic measurements on two-dimensional (2D) electron systems have found diverging behavior in the magnetic susceptibility and appearance of ferromagnetism with decreasing electron density. The critical densities for these…
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…
Parasitic extraction is a powerful tool in the design process of electromechanical devices, specifically as part of workflows that check electromagnetic compatibility. A novel scheme to extract impedances from CAD device models, suitable…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
For nanotechnology nodes, the feature size is shrunk rapidly, the wire becomes narrow and thin, it leads to high RC parasitic, especially for resistance. The overall system performance are dominated by interconnect rather than device. As…
Electronic devices exhibit changes in electrical resistance over time at varying rates, depending on the configuration of certain components. Since measuring overall electrical resistance requires partial disassembly, only a limited number…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
We report the first direct measurements of the micro scale resistance profile between the terminals of a two terminal symmetric thin film Pr0.7Ca0.3MnO3 electrical pulse induced resistance change device composed of a Pr0.7Ca0.3MnO3 active…
This paper explores the possibility to construct two-terminal mechanical devices (one-ports) which are lossless and adjustable. To be lossless, the device must be passive (i.e. not requiring a power supply) and non-dissipative. To be…
A version of the magnetoimpurity theory of the colossal magnetoresistance materials suitable for the double exchange ferromagnetic nondegenerate semiconductors is presented. It provides an explanation of the nonmonotonic temperature…
We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We…
We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an…
The electron transport properties of a four-terminal molecular device are computed within the framework of density functional theory and non-equilibrium Keldysh theory. The additional two terminals lead to new properties, including a…
Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…
The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…
We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…