Variable resistance at the boundary between semimetal and excitonic insulator
Strongly Correlated Electrons
2007-05-23 v1 Mesoscale and Nanoscale Physics
Abstract
We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.
Cite
@article{arxiv.cond-mat/0505247,
title = {Variable resistance at the boundary between semimetal and excitonic insulator},
author = {Massimo Rontani and L. J. Sham},
journal= {arXiv preprint arXiv:cond-mat/0505247},
year = {2007}
}
Comments
Latex Elsevier Style, 14 pages, 3 postscript figures. Special Issue of Solid State Communications on Spontaneous Coherence in Excitonic Systems