Related papers: Probing Intrinsic Material Conductivity in Two-Ter…
In this work, the magneto-resistance (MR) of ultra-thin WTe2/BN heterostructures far away from electron-hole equilibrium is measured. The change of MR of such devices is found to be determined largely by a single tunable parameter, i.e. the…
It is straightforward to calculate the conductance of a quantum device once all its scattering centers are fully specified. However, to do this in reverse, i.e., to find information about the composition of scatterers in a device from its…
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments…
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…
Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface states (TSS), parallel channels may exist, namely the…
The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasi-ballistic…
Soft electronics have recently gathered considerable interest thanks to their bio-mechanical compatibility. An important feature of such deformable conductors is their electrical response to strain. While development of stretchable…
We develop the theoretical framework for calculating magnetic noise from conducting two-dimensional (2D) materials. We describe how local measurements of this noise can directly probe the wave-vector dependent transport properties of the…
Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of conducting…
We report a detailed scaling analysis of resistivity \rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two parameter scaling approach and…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…
An inverse problem for a stationary heat transfer process is studied for a totally isolated bar on its lateral surface, made up of two consecutive sections of different, isotropic and homogeneous materials, perfectly assembly, where one of…
Superconducting parametric amplifiers have great promise for quantum-limited readout of superconducting qubits and detectors. Until recently, most superconducting parametric amplifiers had been based on resonant structures, limiting their…
The search for new superconducting materials approaching room temperature benefits from having a variety of testing methodologies to confirm and characterize the presence of superconductivity. Often the first signatures of new…
Networks of nanowires and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the inter-particle junction resistance, a property that is challenging to…
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation…
This work investigates the variability of tungsten disulfide (WS$_2$)-based devices by experimental characterization in view of possible application in the field of hardware security. To this aim, a preliminary analysis was performed by…
We calculate the temperature, density, and parallel magnetic field dependence of low temperature electronic resistivity in 2D high-mobility Si/SiGe quantum structures, assuming the conductivity limiting mechanism to be carrier scattering by…