Related papers: Controlled generation of a pn-junction in a wavegu…

We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance…

We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an…

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…

We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely…

For optical communication, information is converted between optical and electrical signal domains at a high rate. The devices to achieve such a conversion are various types of electro-optical modulators and photodetectors. These two types…

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…

Graphene has extraordinary electro-optic properties and is therefore a promising candidate for monolithic photonic devices such as photodetectors. However, the integration of this atom-thin layer material with bulky photonic components…

Graphene has shown great potentials for high-speed photodetection. Yet, the responsivities of graphene-based high-speed photodetectors are commonly limited by the weak effective absorption of atomically thin graphene. Here, we propose and…

Graphene has emerged as a novel platform for opto-electronic applications and photodetector, but the inefficient conversion from light to current has so far been an important roadblock. The main challenge has been to increase the light…

Layered two-dimensional materials have shown novel optoelectronic properties and are well suited to be integrated in planar photonic circuits. For example, graphene has been utilized for wideband photodetection. Because graphene lacks a…

Graphene, owing to its zero bandgap electronic structure, is promising as an absorption material for ultra-wideband photodetection applications. However, graphene-absorption based detectors inherently suffer from poor responsivity due to…

Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still…

We explore the potential of bilayer graphene as a cryogenic microwave photodetector by studying the microwave absorption in fully suspended clean bilayer graphene pn junctions in the frequency range of $1-5$ GHz at a temperature of 8 K. We…

Sufficiently large depletion region for photocarrier generation and separation is a key factor for two-dimensional material optoelectronic devices, but few device configurations has been explored for a deterministic control of a space…

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The…

Due to its high charge carrier mobility, broadband light absorption, and ultrafast carrier dynamics, graphene is a promising material for the development of high-performance photodetectors. Graphene-based photodetectors have been…

The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at…

Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a…

In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As…

Transition metal dichalcogenide (TMDC) monolayers have attracted much attention due to their strong light absorption and excellent electronic properties. These advantages make this type of two-dimensional crystal a promising one for…