Related papers: High-efficiency generation of nanoscale single sil…
We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV…
Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the…
As a point defect with unique spin and optical properties, nitrogen-vacancy (NV) center in diamond has attracted much attention in the fields of quantum sensing, quantum simulation, and quantum networks. The optical properties of an NV…
Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an…
Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods…
Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion…
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission…
The identification of new solid-state defect qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent…
Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon…
We used optical confocal microscopy to study optical properties of diamond 50 nm nanocrystals first irradiated with an electron beam, then dispersed as a colloidal solution and finally deposited on a silica slide. At room temperature, under…
Color centers in diamond are very promising candidates among the possible realizations for practical single-photon sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy center shows…
Solid-state spin defects are promising qubits for quantum network nodes. A key challenge towards larger networks is creating defects with high yield into nanophotonic devices, while maintaining good optical and spin properties. Here, we…
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively…
Silicon carbide is among the leading quantum information material platforms due to the long spin coherence and single-photon emitting properties of its color center defects. Applications of silicon carbide in quantum networking, computing,…
The properties of single-walled carbon nanotubes (SWCNTs) and graphene can be modified by the presence of covalently bound impurities. Although this can be achieved by introducing chemical additives during synthesis, that often hinders…
Silicon carbide (SiC) is the leading wide-bandgap semiconductor material, providing mature doping and device fabrication. Additionally, SiC hosts a multitude of optically active point defects (color centers) and is relevant for many…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
Powered by the mutual developments in instrumentation, materials andtheoretical descriptions, sensing and imaging capabilities of quantum emitters insolids have significantly increased in the past two decades. Quantum emitters insolids,…
Atomic-scale impurity spins, also called color centers, in an otherwise spin-free diamond host lattice have proven to be versatile tools for applications in solid-state-based quantum technologies ranging from quantum information processing…
Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…