Related papers: High-efficiency generation of nanoscale single sil…
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Color centers in diamond are versatile solid state atomic-like systems suitable for quantum technological applications. In particular, the negatively charged silicon vacancy center (SiV) can exhibit a narrow photoluminescence (PL) line and…
Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI…
Spin defects in solids offer promising platforms for quantum sensing and memory due to their long coherence times and optical addressability. Here, we integrate a single nitrogen-vacancy (NV) center in diamond with scanning probe microscopy…
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive…
The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the…
Silicon vacancy (V$_{Si}$) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties including a long spin coherence lifetime and bright,…
We experimentally demonstrate the integration of silicon-vacancy centers in nanodiamonds (SiV-NDs) with an optical nanofiber (ONF). We grow SiV-NDs on seed NDs dispersed on a quartz substrate using a microwave plasma-assisted chemical vapor…
Color centers in diamond are at the forefront of the second quantum revolution. A handful of defects are in use, and finding ones with all the desired properties for quantum applications is arduous. By using high-throughput calculations, we…
Defects in wide-bandgap semiconductors provide a pathway for applications in quantum information and sensing in solid state materials. The silicon vacancy in silicon carbide has recently emerged as a new candidate for optical control of…
Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation…
Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi…
We report on pulsed-laser induced generation of nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed…
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature.…
The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing…
Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the…
Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the…
Silicon carbide (SiC) is rapidly emerging as a leading platform for the implementation of nonlinear and quantum photonics. Here, we find that commercial SiC, which hosts a variety of spin qubits, possesses low optical absorption that can…
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the…