Clustering of vacancy defects in high-purity semi-insulating SiC
Materials Science
2015-06-25 v3
Abstract
Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.
Keywords
Cite
@article{arxiv.cond-mat/0603849,
title = {Clustering of vacancy defects in high-purity semi-insulating SiC},
author = {R. Aavikko and K. Saarinen and F. Tuomisto and B. Magnusson and N. T. Son and E. Janzen},
journal= {arXiv preprint arXiv:cond-mat/0603849},
year = {2015}
}
Comments
8 pages, 5 figures