Related papers: Electrical spin orientation, spin-galvanic and spi…
Resonant behavior involving spin-orbit entangled states occurs for spin transport along a narrow channel defined in a two-dimensional electron gas, including an apparent rapid relaxation of the spin polarization for special values of the…
The influence of disorder and interaction on the ground state polarization of the two-dimensional (2D) correlated electron gas is studied by numerical investigations of unrestricted Hartree-Fock equations. The ferromagnetic ground state is…
We report a theoretical investigation on spin-Hall conductance fluctuation of disordered four terminal devices in the presence of Rashba or/and Dresselhaus spin-orbital interactions in two dimensions. As a function of disorder, the…
Using the four-terminal Landauer-B\"{u}ttiker formula and Green's function approach, we calculate numerically the spin-Hall conductance in a two-dimensional junction system with the Rashba spin-orbit (SO) coupling and disorder. We find that…
We study spin-dependent transport through a spin diode in the presence of spin-flip by means of reduced density matrix approach. The current polarization and the spin accumulation are computed and influence of spin-flip on the current…
We investigate the current-induced spin polarization in the two-dimensional hole gas (2DHG) with the structure inversion asymmetry. By using the perturbation theory, we re-derive the effective $k$-cubic Rashba Hamiltonian for 2DHG and the…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
Because of the peculiar coupling of spatial and spin degrees of freedom effected by the Rashba spin-orbit interaction, lateral confinement of a two dimensional electronic system leads to a finite transverse spin polarization near the…
We show that the parallel magnetic field-induced increase in the critical electron density for the Anderson transition in a strongly interacting two-dimensional electron system is caused by the effects of exchange and correlations. If the…
Electrically generated spin accumulation due to the spin Hall effect is imaged in n-GaAs channels using Kerr rotation microscopy, focusing on its spatial distribution and time-averaged behavior in a magnetic field. Spatially-resolved…
We have studied transport properties in a two-dimensional electron gas with equal Rashba and Dresselhaus spin-orbit interactions under a perpendicular magnetic field. By employing the exact solution for this system, we found resonant charge…
The theory of spin drift and diffusion in two-dimensional electron gases is developed in terms of a random walk model incorporating Rashba, linear and cubic Dresselhaus, and intersubband spin-orbit couplings. The additional subband degree…
We have studied the magnetic and transport properties of an ultra-low-resistivity two-dimensional electron system in a Si/SiGe quantum well. The spin polarization increases linearly with the in-plane magnetic field and the enhancement of…
We demonstrate that the flow of a longitudinal spin current with different spin polarization will induce different patterns of charge accumulation in a two-terminal strip, or electric current distribution in a four-terminal Hall-bar…
Experimental studies of spin transport in a two-dimensional electron gas hosted by a triple GaAs/AlGaAs quantum well are reported. Using time-resolved Kerr rotation, we observed the precession of the spin polarization about a…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
We derive diffusion equations, which describe spin-charge coupled transport on the helical metal surface of a three-dimensional topological insulator. The main feature of these equations is a large magnitude of the spin-charge coupling,…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin, which offer potential…