Related papers: Valley splitting of single-electron Si MOS quantum…
While bulk silicon has long been understood to exhibit relatively weak spin-orbit coupling (SOC), confinement of electrons to quantum dots (QDs) at a silicon heterointerface results in significantly larger SOC. This is a concern for…
We propose a non-destructive means of characterizing a semiconductor wafer via measuring parameters of an induced quantum dot on the material system of interest with a separate probe chip that can also house the measurement circuitry. We…
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons…
Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building scalable quantum processing architectures relies on accurate…
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits…
Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave…
The spin-valley or Kramers qubit promises significantly enhanced spin-valley lifetimes due to strong coupling of the electrons' spin to their momentum (valley) degrees of freedom. In transition metal dichalcogenides (TMDCs) such spin-valley…
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…
Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that…
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
The energy spectrum and wave functions of electrons in a single silicon quantum dot provide valuable insights into the capabilities and limitations of such a system in quantum information processing. Here we investigate the low-lying…
We investigate the optical control possibilities of spin-valley qubit carried by single electrons localized in nanostructures of monolayer TMDs, including small quantum dots formed by lateral heterojunction and charged impurities. The…
The selective control of specific momentum valleys lies at the core of valleytronics, a field that has thus far focused primarily on the $\mathbf{K}$ and $\mathbf{K'}$ valleys in transition metal dichalcogenides (TMDs). However, direct…
At the center of quantum computing1 realization is the physical implementation of qubits - two-state quantum information units. The rise of graphene2 has opened a new door to the implementation. Because graphene electrons simulate…
Arrays of quantum dots (QDs) are a promising candidate system to realize scalable, coupled qubit systems and serve as a fundamental building block for quantum computers. In such semiconductor quantum systems, devices now have tens of…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated…
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…
Achieving uniform and scalable control of semiconductor spin qubits remains a key challenge for large scale quantum computing. In this work, we investigate how gate oxide thickness influences uniformity in dense two dimensional silicon…