Related papers: A model study of present-day Hall-effect circulato…
We predict the coexistence of tunneling spin and valley Hall effects when electrons in graphene coherently transmit through a barrier with the broken inversion symmetry and proximity-induced spin-orbit coupling. Due to the rotation of the…
Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…
The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction justify the sharp-corner assumption. In a…
We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum that lead to unusual effective behavior of the classical Hall effect. Using an anisotropic structure,…
A sensor that integrates high sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer was fabricated…
We present a numerical macrospin model for harmonic voltage detection in multilayer spintronic devices. The core of the computational backend is based on the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines high performance with…
We present a theory of composite fermion edge states and their transport properties in the fractional and integer quantum Hall regimes. We show that the effective electro-chemical potentials of composite fermions at the edges of a Hall bar…
We study the role of the Hall current and electron inertia in collisionless magnetic reconnection within the framework of full two-fluid MHD. At spatial scales smaller than the electron inertial length, a topological change of magnetic…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
The breaking of parity and time-reversal symmetry in two-dimensional Fermi liquids gives rise to non-dissipative transport features characterized by the Hall viscosity. In magnetic fields, the Hall viscous force directly competes with the…
Quantized Hall conductance and de Haas van Alphen (dHvA) oscillation are studied theoretically in the tight-binding model for (TMTSF)$_2$NO$_3$, in which there are small pockets of electron and hole due to the periodic potentials of anion…
We have investigated microwave transmission through the edge of quantum Hall systems by employing a coplanar waveguide (CPW) fabricated on the surface of a GaAs/AlGaAs two-dimensional electron gas (2DEG) wafer. An edge is introduced to the…
Measurement techniques based upon the Hall effect are invaluable tools in condensed matter physics. When an electric current flows perpendicular to a magnetic field, a Hall voltage develops in the direction transverse to both the current…
Patterned two-dimensional electron gas (2DEG) systems into micrometer Hall bars can be used as Hall magnetosensors to provide detailed information on the magnetic field distribution. In this way, ballistic Hall probes have already been…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…
The recent emergence of two-dimensional (2D) van der Waals ferromagnets has provided a new platform for exploring magnetism in the flatland and for designing 2D ferromagnet-based spintronics devices. Despite intensive studies, the anomalous…
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby…
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration we…
The edge of a two-dimensional electron system (2DES) in a magnetic field consists of one-dimensional (1D) edge-channels that arise from the confining electric field at the edge of the specimen$^{1-3}$. The crossed electric and magnetic…