Related papers: The Miniband Alignment Field-Effect Transistor: a …
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and…
Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate…
Possibility of flat-band ferromagnetism in quantum dot arrays is theoretically discussed. By using a quantum dot as a building block, quantum dot superlattices are possible. We consider dot arrays on Lieb and kagome lattices known to…
We investigate a lattice scalar field theory in the presence of a bias favouring the establishment of an energy current, as a model for stationary nonequilibrium processes at low temperature in a non-integrable system. There is a transition…
The stability of the superconducting dissipationless and resistive states in single-crystalline NbSe2 nanobelts is characterized by transport measurements in an external magnetic field (H). Current-driven electrical measurements show…
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer…
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…
Sub-threshold swing (S) defines the sharpness of ON-OFF switching of a Field Effect Transistor (FET) with S=0 corresponding to abrupt switching characteristics. While thermodynamics dictates S to be greater than or equal to 60mV/dec for…
We report amplification of biomolecular recognition signal in lithographically defined silicon nanochannel devices. The devices are configured as field effect transistors (FET) in the reversed source-drain bias region. The measurement of…
Four-terminal resistance measurements have been carried out on Zn nanowires formed using electron-beam lithography. When driven resistive by current, these wires re-enter the superconducting state upon application of small magnetic fields.…
Superconducting nanowires are the dual elements to Josephson junctions, with quantum phase-slip processes replacing the tunneling of Cooper pairs. When the quantum phase-slip amplitude ES is much smaller than the inductive energy EL, the…
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…
We present results from an extensive study of fluctuation phenomena in superconducting nanowires made from sputtered NbN. Nanoscale wires were fabricated in form of a meander and operated at a constant temperature T~0.4Tc(0). The…
Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate…
We present a design for a superconducting nanowire binary shift register, which stores digital states in the form of circulating supercurrents in high-kinetic-inductance loops. Adjacent superconducting loops are connected with…
Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore de-ionized (DI) water as a solution top gate for…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
We demonstrate semiconductor superlattices or nanocavities as narrow band acoustic transducers in the sub-terahertz range. Using picosecond ultrasonics experiments in the transmission geometry with pump and probe incident on opposite sides…
A systematic study has been carried out on the previously reported "magnetic-field-induced superconductivity" of Zn nanowires. By varying parameters such as magnetic field orientation and wire length, the results provide evidence that the…
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic…