Related papers: Suppressing spin relaxation in silicon
The long standing problem of inexplicably short spin relaxation in carbon nanotubes (CNTs) is examined. The curvature-mediated spin-orbital interaction is shown to induce fluctuating electron spin precession causing efficient relaxation in…
Spintronic devices usually rely on long spin relaxation times and/or lengths for optimum performance. Therefore, the ability to modulate these quantities with an external agent offers unique possibilities. The dominant spin relaxation…
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
We investigate electron spin dynamics in narrow two-dimensional n-InGaAs channels as a function of the channel width. The spin relaxation times increase with decreasing channel width, in accordance with recent theoretical predictions based…
We consider a quasiclassical model that allows us to simulate the process of spin diffusion and relaxation in the presence of a highly nonuniform magnetic field. The energy of the slow relaxing spins flows to the fast relaxing spins due to…
Theory of the electron spin relaxation in graphene on the SiO$_2$ substrate is developed. Charged impurities and polar optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field which…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the…
We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using $\textit{ab initio}$ approaches. Combining $\text{GW}$-Bethe-Salpeter equation…
Paraffin coatings on glass slides were investigated through both X-ray photoelectron spectroscopy (XPS) and spin relaxation measurement for cesium (Cs) vapor. The components of the glass substrate, such as silicon (Si) and oxygen (O),…
Understanding substrate effects on spin dynamics and relaxation in two-dimensional (2D) materials is of key importance for spintronics and quantum information applications. However, the key factors that determine the substrate effect on…
We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots,…
Recent experimental breakthroughs have demonstrated that the electron spin in silicon can be reliably injected and detected as well as transferred over distances exceeding 1 mm. We propose an on-chip communication paradigm which is based on…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic…
Recent experimental and theoretical studies have established that the spin-lattice relaxation rate, $1/T_1$, measured in nuclear magnetic resonance (NMR) experiments is a site-sensitive probe for the electronic spectrum in the mixed state…
It is proposed that the observed small (100 ps) spin relaxation time in graphene is due to resonant scattering by local magnetic moments. At resonances, magnetic moments behave as spin hot spots: the spin-flip scattering rates are as large…