Related papers: Spin-dependent transport and current modulation in…
A spin-thermo-electronic valve with the free layer of exchange-spring type and inverse magnetoresistance is investigated. The structure has S-shaped current-voltage characteristics and can exhibit spontaneous oscillations when integrated…
The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional…
We study the time-development processes of spin and charge transport phenomena in a topological Dirac semimetal attached to a ferromagnetic insulator with a precessing magnetization. Compared to conventional normal metals, topological Dirac…
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on…
Co$_{3}$Sn$_{2}$S$_{2}$ (CSS) is one of the shandite compounds and becomes a magnetic Weyl semimetal candidate below the ferromagnetic phase transition temperature ($\textit{T}_\textrm{C}$). In this paper, we investigate the temperature…
We study the magnetization dynamics of spin valve structures with a free composite synthetic ferromagnet (SyF) that consists of two ferromagnetic layers coupled through a normal metal spacer. A ferromagnetically coupled SyF can be excited…
A theory of the proximity effects of the exchange splitting in a ferromagnetic metal on a two dimensional electron gas (2DEG) in a semiconductor is presented. The resulting spin-dependent energy and lifetime in the 2DEG create a marked…
We report a strategy to design nanoscale cold-source field-effect transistors (CS-FETs) with bias-independent sub-60 mV/dec subthreshold swing (SS). By first-principles calculations and quantum-transport simulations, we reveal that the…
We investigate spin transport in two dimensional ferromagnetic (FTI) and antiferromagnetic (AFTI) topological insulators. In presence of an in plane magnetization AFTI supports zero energy modes, which enables topologically protected edge…
We demonstrate a strong tunability of the spin-pumping contribution to magnetic damping in a thin-film ferromagnetic free layer interfaced with a synthetic ferrimagnet (SFM), acting as a spin-sink, via a thin Cu-spacer. The effect strongly…
We formulate a theory of spin dependent transport of an electronic circuit involving ferromagnetic elements with non-collinear magnetizations which is based on the conservation of spin and charge current. The theory considerably simplifies…
Using fully self consistent methods, we study spin transport in realistic, fabricable experimental spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our…
The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we…
In this work we study the transport properties of hybrids that consist of exchange biased ferromagnets (FMs) combined with a low-Tc superconductor (SC). Not only different FMs but also various structural topologies have been investigated:…
Current studies of non-reciprocal superconducting (SC) transport have centered on the forward-backward asymmetry of the critical current measured along a single axis. In most realizations, this diode effect is achieved via introducing…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
We present an extension to simple s-d models, aiming at simulating ultrafast magnetization dynamics and spin transport in metallic heterostructures. In particular, we consider an alternative spin dissipation channel due to a finite exchange…
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric…