Related papers: Spin-dependent transport and current modulation in…
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the…
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs.…
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional…
Synthetic antiferromagnetic layers (SAF) are incorporated into spin transfer nanopillars giving a layer composition [Co(bottom)/Ru/Co(fixed)]/Cu/Co(free), where square brackets indicate the SAF. The Co(bottom) and Co(fixed) layers are…
Based on Keldysh's nonequilibrium Green function method, the spin-dependent transport properties in a ferromagnet-quantum dot (QD)-ferromagnet coupled system are investigated. It is shown the spin current shows quite different…
We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent…
Spin waves in insulating magnets are ideal carriers for spin currents with low energy dissipation. An electric field can modify the dispersion of spin waves, by directly affecting, via spin-orbit coupling, the electrons that mediate the…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in…
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…
We calculate the current-voltage characteristic of a one-dimensional band insulator with magnetic field and Rashba spin-orbit coupling which is connected to nonmagnetic leads. Without spin-orbit coupling we find a complete spin-filtering…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
Topology is a key ingredient driving the emergence of quantum devices. Topological field-effect transistor (TFET) has been proposed to outperform the conventional FET by replacing the ON state with topology-protected quantized conductance,…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material…
Magnon based spintronic devices require the modulation of magnon spin transport for their operations. We provide a proof-of-principle of an unconventional two-terminal non-local magnon transport device where the same contact is…
We study the effects of electrostatic gating on the current-induced phenomena in ultrathin ferromagnet/heavy metal heterostructures. We utilize heterodyne detection and analysis of symmetry with respect to the direction of the magnetic…
In the recent years, a spin-valve was developed with a current-confined-path structure consisting of a non-oxide-layer (NOL). We analyze magnetic structures of the current-confinedpath in the nano-oxide layer sandwiched between…