The understanding of the fundamentals of spin and charge densities and currents interconversion by spin-orbit coupling can enable efficient applications beyond the possibilities offered by conventional electronics. For this purpose we consider various forms of the frequency-dependent inverse spin galvanic effect (ISGE) in semiconductor quantum wells and epilayers taking into account the cubic in the electron momentum spin-orbit coupling in the Rashba and Dresselhaus forms, concentrating on the current-induced spin polarization (CISP). We find that including the cubic terms qualitatively explains recent findings of the CISP in InGaAs epilayers being the strongest if the internal spin-orbit coupling field is the smallest and vice versa (Norman et . 2014, Luengo et al. 2017), in contrast to the common understanding. Our results provide a promising framework for the control of spin transport in future spintronics devices.
@article{arxiv.1804.03607,
title = {Theory of the inverse spin galvanic effect in quantum wells},
author = {Amin Maleki Sheikhabadi and Iryna Miatka and E. Ya. Sherman and Roberto Raimondi},
journal= {arXiv preprint arXiv:1804.03607},
year = {2018}
}