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Superconducting interfaces have recently been demonstrated to contain a rich variety of effects that give rise to sizable thermoelectric responses and unexpected thermal properties, despite traditionally being considered poor…
Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal…
We show that the interaction constant governing the long-range electron-electron interaction in a quantum wire coupled to two reservoirs and capacitively coupled to a gate can be determined by a low frequency measurement. We present a…
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a…
Current-voltage characteristics and the linear resistance of the two-dimensional XY model with and without external uniform current driving are studied by Monte Carlo simulations. We apply the standard finite-size scaling analysis to get…
This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the…
This paper proposes a recursive, virtual admittance based, secondary controller for DG units that improves the voltage profile in distribution networks. First, the adaptation of the virtual admittance concept for the goal of voltage…
We study impact of the near-interfacial oxide traps on the C-V and I-V characteristics of graphene gated structures. Methods of extraction of interface trap level density in graphene field effect devices from the capacitance-voltage…
The effect of bias voltages on the statistical properties of rough surfaces has been studied using atomic force microscopy technique and its stochastic analysis. We have characterized the complexity of the height fluctuation of a rough…
This paper reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour…
Memristors have been at the forefront of nanoelectronics research for the last decade, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their…
Deep theoretical understanding of the electrical response of Josephson junctions is indispensable regarding both recent discoveries of new kinds of superconductivity and technological advances such as superconducting quantum computers.…
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…
Efficient computation of sensitivities is a promising approach for efficiently of designing and optimizing high voltage direct current cable joints. This paper presents the adjoint variable method for coupled nonlinear transient…
A method to measure the electrical connectivity between square superconducting plates joined by weak link interfaces is presented. It is based on observation of lines where the flow of critical current abruptly changes direction due to the…
We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with…
The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasi-ballistic…
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that these states correspond to the minimum of free energy. Here,…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
Modeling a normal/superconducting interface, we consider a semi-infinite wire whose edge is adjacent to a normal magnetic metal, assuming asymptotic convergence, away from the boundary, to the purely superconducting state. We obtain that…