Related papers: Graphical analysis of Current-Voltage Characterist…
This work investigates the relationship between self-heating and the characteristic features observed in the current-voltage characteristics (IVCs) of superconductor-insulator-superconductor (SIS) junctions. Finite-element analysis is…
The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects…
The existed theories and methods for calculating interfacial thermal conductance of solid-solid interface lead to diverse values that deviate from experimental measurements. In this letter, We propose a model to estimate the ITC at high…
Nanofluidic memristors have demonstrated great potential for neuromorphic system applications with the advantages of low energy consumption and excellent biocompatibility. Here, an effective way is developed to regulate the memristive…
Key technologies in energy conversion and storage, sensing and chemical synthesis rely on a detailed knowledge about charge transfer processes at electrified solid-liquid interfaces. However, these interfaces continuously evolve as a…
We use thermal noise induced currents to image the real and imaginary parts of the conductivity of a body. Covariances of the thermal noise currents measured at a few electrodes are shown to be related to a deterministic problem. We use the…
Memristors are passive circuit elements which behave as resistors with memory. The recent experimental realization of a memristor has triggered interest in this concept and its possible applications. Here, we demonstrate memristive response…
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control of first-order memristive devices to derive the most…
We argue that the relative thermal conductance between interfaces with different morphologies is controlled by crystal structure through $M_{min}/M_c > 1$, the ratio between the {\it minimum mode} count on either side $M_{min}$, and the…
The current-voltage (I-V) characteristics of various MgB2 films have been studied at different magnetic fields parallel to c-axis. At fields \mu0H between 0 and 5T, vortex liquid-glass transitions were found in the I-V isotherms.…
A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced and its application demonstrated. The technique is based on thermal discolouration of a…
Metal-semiconductor contacts are a pillar of modern semiconductor technology. Historically, their microscopic understanding has been hampered by the inability of traditional analytical and numerical methods to fully capture the complex…
This paper presents a brief comparison for voltage and current controllers implementation in both stationary and dynamic reference frame for a microgrid (MG) application. Diagrams of implementations are reviewed and the simulation results…
Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave…
A hitherto unexploited characteristic feature of emerging iontronic devices for information processing is the intrinsic mobility of the medium (water) of dissolved ions in aqueous electrolytes, which therefore not only respond to voltage…
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or…
We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, medium injection, high injection levels and the ohmic region…
Complex oxide interfaces are a promising platform for studying a wide array of correlated electron phenomena in low-dimensions, including magnetism and superconductivity. The microscopic origin of these phenomena in complex oxide interfaces…
In this paper we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage characteristics it is possible to extract a series of material parameters of alternative gate…