Related papers: Nonvolatile Multi-level Memory and Boolean Logic G…
Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…
We extend the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors whose properties depend on the state and history of the system. All these elements show pinched hysteretic loops in the two…
The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relative alignment of magnetic moments of the two ferromagnetic…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…
Surface-plasmon-polariton waves propagating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense on-chip integrated logic circuits overcoming the diffraction limitation of photonics. While recent…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
Memristors offer significant advantages as in-memory computing devices due to their non-volatility, low power consumption, and history-dependent conductivity. These attributes are particularly valuable in the realm of neuromorphic circuits…
We report a simulation study on interacting ensembles of Co nanomagnets that can perform basic logic operations and propagate logic signals, where the state variable is the magnetization direction. Dipole field coupling between individual…
Stable dissipative solitons are perfect carries of optical information due to remarkable stability of their waveforms that allows the signal transmission with extremely dense soliton packing without loosing the encoded information. Apart of…
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of…
Manipulation of tunneling spin-polarized electrons via a ferroelectric interlayer sandwiched between two ferromagnetic electrodes, dubbed Multiferroic Tunnel Junctions (MFTJs), can be achieved not only by the magnetic alignments of two…
Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…
Construction of parallel logic gates at nano-scale level undoubtedly improves the efficiency of computable operations. In this work we put forward a new idea of designing two distinct logical operations {\em simultaneously} in the two…
The same as in microprocessor fabrication, nonvolatile memory devices are facing the problem in device size scaling down, such as large leakage current density. High-k materials are considered to solve it. However, simply replacing low-k to…
We investigate the State-Controlled Cellular Neural Network (SC-CNN) framework of Murali-Lakshmanan-Chua (MLC) circuit system subjected to two logical signals. By exploiting the attractors generated by this circuit in different regions of…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…