Related papers: Charge collection efficiency mapping of interdigit…
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse…
In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross…
In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency…
This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were…
The ion beam-induced charge (IBIC) analysis of a commercial silicon photodiode configured as a Position Sensitive Detector (PSD) for energetic charged particles is the subject of this report. Although the photodiode is designed for…
This paper reports on the investigation of the electronic properties of a thin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC) technique. The device under test is a thin film (total thickness around 10 um) multilayer…
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations…
Due to the increased commercial availability, wide-bandgap semiconductors and their radiation hardness have recently received increased interest from the particle physics community. 4H-Silicon Carbide (SiC), especially, is an attractive…
Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of…
The Ion Beam Induced Charge (IBIC) technique is widely used to characterize the electronic properties of semiconductor materials and devices. Its main advantage over other charge collection microscopies stems in the use of MeV ion probes,…
Silicon carbide detectors exhibit good detection performance and are being considered for detection applications. However, the presence of surface electrode of detector limits the application of low-penetration particle detectors,…
During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined…
Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the…
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Ideally, an EBIC measurement reflects the spatially resolved quantum…
The collected charge of two pad diodes is measured along the diode width using a 5:2 GeV electron beam at the DESY II beam test facility. The electron beam enters parallel to the readout electrode plane and perpendicular to the edge of the…
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since…
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…
The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier…
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates.…