Related papers: Charge collection efficiency mapping of interdigit…
In ion cancer therapy, high-intensity ion beams are used to treat tumors by taking advantage of the Bragg-Peak. Typical ion therapy centers use particle rates up to $10^{10}$ ions/second for treatment. On the other hand, such intensities…
A silicon carbide PIN detector was fabricated and its radiation tolerance under Ta heavy ion irradiation of 2370 MeV was evaluated. Its electrical properties, charge collection performance and time resolution of $\beta$-particles…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an…
Electron beam ion traps (EBIT) are ideal tools for both production and study of highly charged ions (HCI). In order to reduce their construction, maintenance, and operation costs we have developed a novel, compact, room-temperature design,…
We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~\mu$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence…
The 4H-SiC material exhibits good detection performance, but there are still many problems like signal distortion and poor signal quality. The 4H-SiC low gain avalanche detector (LGAD) has been fabricated for the first time to solve these…
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy…
In this work, charge collection profiles of non-irradiated and irradiated 150 $\mu$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1…
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined…
The Silicon Charge Detector (SCD) is a subdetector of the High Energy Cosmic Radiation Detection payload. The dynamic range of the silicon microstrip detector can be extended by the capacitive coupling effect, which is related to the…
Recently, optical bound states in continuum in various passive photonic crystals have been identified and similar structures incorporated with optical gain have been reported to exhibit lasing. However, no explicit control over the type of…
Background: Commercially available ionization chambers (ICs) exposed to ultra-high dose per pulse (UHDP) exhibit deviations from a linear dose response due to volume recombination. Simulation models have been developed to describe the…
The Electron-ion collider in China (EicC) is a proposed future electron-ion collider designed to achieve a high luminosity, with a center-of-mass energy ranging from 15 to 20 GeV. Excellent particle identification (PID) with extensive…
We present the performance and application of a commercial off-the shelf Si PIN diode (Hamamatsu S14605) as a charged particle detector in a compact ion beam system (IBS) capable of generating D-D and p-B fusion charged particles. This…
Inter pixel capacitance (IPC) is a deterministic electronic coupling resulting in a portion of signal incident on one pixel of a hybridized detector array being measured in adjacent pixels. Data collected by light sensitive HgCdTe arrays…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
To cope with environments with high levels of radiation, non-silicon semiconductors such as silicon carbide detectors are being proposed for instrumentation. 4H-SiC diodes for radiation detection have been fabricated in the IMB-CNM Clean…
This paper describes a comprehensive experimental study on viability and prospects for the measurement of electroweak observables in $e^{+}e^{-}\rightarrow b\bar{b}$ and $e^{+}e^{-}\rightarrow c\bar{c}$ processes at the International Linear…