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Moir\'e superlattices of transitional metal dichalcogenides exhibit strong electron-electron interaction that has led to experimental observations of Mott insulators and generalized Wigner crystals. In this letter, we report direct…
Quantum gases consisting of species with distinct quantum statistics, such as Bose-Fermi mixtures, can behave in a fundamentally different way than their unmixed constituents. This makes them an essential platform for studying emergent…
A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatures of 5 and 80 K. A moir\'e pattern is observed, arising…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
We compute the correlated electronic structure of stacked $1T$-TaS$_2$ bilayers using the $GW$ + EDMFT method. Depending on the surface termination, the semi-infinite uncorrelated system is either band-insulating or exhibits a metallic…
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing contact resistance, identifying good gate dielectrics is a…
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices…
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors in an advanced semiconductor manufacturing process.…
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density…
We study the electronic structure of a heterojunction made of two monolayers of MoS2 and WS2. Our first-principles density functional calculations show that, unlike in the homogeneous bilayers, the heterojunction has an optically active…
Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum…
Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…
Coulomb drag experiments can give us information about the interaction state of double-layer systems. Here, we demonstrate anomalous Coulomb drag behaviours in a two-dimensional electron-electron bilayer system constructed by stacking…
We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K.…
A recent Letter by Zhu et al [Phys. Rev. Lett. 127, 247702 (2021)] claimed a unified mechanism for quantum oscillations (QOs) in graphite-gated 2D devices based on studies of three cases (WTe2, MoTe$_2$/WSe$_2$ heterobilayers and bilayer…
We propose a new solid state implementation of a quantum computer (quputer) using ballistic single electrons as flying qubits in 1D nanowires. We use a single electron pump (SEP) to prepare the initial state and a single electron transistor…
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can not be reached without accompanying gate insulators which are…
We study density-balanced, mass-asymmetric electron-hole bilayers as a tunable platform for correlated quantum phases. With independent control of carrier density and interlayer separation, the system exhibits a rich phase diagram,…
We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19…
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…