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Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching…
Nanodiamonds (NDs) are key materials for building nanoscale quantum sensing, imaging and communication devices. Scalable configuration of single NDs on heterogeneous platforms, forming photonic quantum source arrays, will be an essential…
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here, we demonstrate memcapacitor structures utilizing a quasi…
The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
Topological insulators (TIs) have attracted much attention due to their spin-polarized surface and edge states, whose origin in symmetry gives them intriguing quantum-mechanical properties. Robust control over the chemical potential of TI…
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…
Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field…
Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a…
We analyze electrostatic interaction between a sharp conducting tip and a thin one-dimensional wire, e.g., a carbon nanotube, in a scanned gate microscopy (SGM) experiment. The problem is analytically tractable if the wire resides on a thin…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with…
We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow…
Antiferromagnets (AFs) attract much attention due to potential applications in spintronics. Both the electric current and the electric field are considered as tools suitable to control properties and the N\'eel vector direction of AFs.…
Exploration of new dielectrics with large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near breakdown limit. To address this looming challenge, we demonstrate…
The atomic and electronic structures of ErAs nanoparticles embedded within a GaAs matrix are examined via cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/XSTS). The local density of states (LDOS) exhibits a finite…
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework…
Circulators are non-reciprocal circuit elements integral to technologies including radar systems, microwave communication transceivers, and the readout of quantum information devices. Their non-reciprocity arises from the interference of…