English

Finger-gate manipulated quantum transport in Dirac materials

Mesoscale and Nanoscale Physics 2015-05-12 v2

Abstract

We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.

Keywords

Cite

@article{arxiv.1410.5909,
  title  = {Finger-gate manipulated quantum transport in Dirac materials},
  author = {Ioannis Kleftogiannis and Chi-Shung Tang and Shun-Jen Cheng},
  journal= {arXiv preprint arXiv:1410.5909},
  year   = {2015}
}

Comments

14 pages, 6 figures, some revisions/updates, published on JPCM

R2 v1 2026-06-22T06:32:11.508Z