Related papers: A non-invasive method for nanoscale electrostatic …
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…
Suspended single-walled carbon nanotube devices comprised of high quality electrical contacts and two electrostatic gates per device are obtained. Compared to nanotubes pinned on substrates, the suspended devices exhibit little hysteresis…
We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…
Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with…
We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…
Recent advances in electrostatic gating provide a novel way to modify the carrier concentration in materials via electrostatic means instead of chemical doping, thus minimizing the impurity scattering. Here, we use first-principles Density…
The extraordinary electronic properties of graphene, such as its continuously gate-variable ambipolar field effect and the resulting steep change in resistivity, provided the main thrusts for the rapid advance of graphene electronics. The…
Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…
Confinement of small-gapped fractional quantum Hall states facilitates quasiparticle manipulation and is an important step towards quasiparticle interference measurements. Demonstrated here is conduction through top gate defined, narrow…
The integration of nanoscale electronics with conventional optical devices is restricted by the diffraction limit of light. Metals can confine light at the subwavelength scales needed, but they are lossy, while dielectric materials do not…
We have developed a technology to reproducibly make gaps with distance control on the single atom scale. The gold contacts are flat on the nanometre scale and are fabricated on an oxidized aluminium film that serves as a gate. We show that…
Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced…
Material research has been a major driving force in the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices; identifying new magnetic…
Devices made from two dimensional materials such as graphene and transition metal dichalcogenides exhibit remarkable electronic properties of interest to many subdisciplines of nanoscience. Owing to their 2D nature, their quality is highly…
We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…
In this paper, we report on the method of nondestructive quality control that can be used in fabrication of GaAs high-speed electronics. The method relies on the surface potential mapping and enables rigid in vivo analysis of transport…
Two-dimensional electron gas (2DEG) confined in quantum wells at insulating oxide interfaces have attracted much attention as their electronic properties display a rich physics with various electronics orders such as superconductivity and…
We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow…
We propose a new paradigm of electronic devices based only on two electrodes separated by a gap, i.e. without any functional element bridging them. We use a tight-binding model to show that, depending on the type of material of the…
Coupled hybrid nanostructures are demonstrated using the combination of lithographically patterned graphene on top of a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the…