Related papers: Imaging Electron Motion in a Few Layer MoS2 Device
Among newly discovered two-dimensional (2D) materials, semiconducting ultrathin sheets of MoS2 show potential for nanoelectronics. However, the carrier mobility in MoS2 is limited by scattering from surface impurities and the substrate. To…
Research in semiconductor physics has advanced to the study of two-dimensional (2D) materials where the surface controls electronic transport. A scanning probe microscope (SPM) is an ideal tool to image electronic motion in these devices by…
Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and…
Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling…
In view of their immensely intriguing properties, two dimensional materials are being intensely researched in search of novel phenomena and diverse application interests, however, studies on the realization of nanocomposites in the…
Electron transport in nanoscale devices can often result in nontrivial spatial patterns of voltage and current that reflect a variety of physical phenomena, particularly in nonlocal transport regimes. While numerous techniques have been…
We present simulations of an imaging mechanism that reveals the trajectories of electrons in a two-dimensional electron gas (2DEG), as well as simulations of the electron flow in zero and small magnetic fields. The end goal of this work is…
Images of electron flow through a two-dimensional electron gas from a quantum point contact (QPC) can be obtained at liquid He temperatures using scanning probe microscopy (SPM). A negatively charged SPM tip depletes the electron gas…
Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…
We measure the energy distribution of electrons passing through a two-dimensional electron gas using a scanning probe microscope. We present direct spatial images of coherent electron wave flow from a quantum point contact formed in a…
Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…
The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built…
The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area…
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good…
The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulphide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to…
On-chip integration of 2D materials provides a promising route towards next-generation integrated optical devices with performance beyond existing limits. Here, significantly enhanced spectral broadening induced by self-phase modulation…
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 {\mu}m down to 50 nm. We compare the short channel behavior of sets of MOSFETs…
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most…
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric…