Related papers: Pressure and temperature driven phase transitions …
Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a $\delta$ like density distribution along the crystal…
The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for an electron-hole system, has been observed across the charge…
We show that the critical temperature of a ferromagnetic phase transition in a quasi-two-dimensional hole gas confined in a diluted magnetic semiconductor quantum well strongly depends on the hole chemical potential and hole density. The…
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for…
We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in…
We performed X-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase…
We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and…
The HgTe quantum well (QW) is a well-characterized two-dimensional topological insulator (2D-TI). Its band gap is relatively small (typically on the order of 10 meV), which restricts the observation of purely topological conductance to low…
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…
We present far-infrared magnetospectroscopy measurements of a HgTe quantum well in the inverted band structure regime over the temperature range of 2 to 60 K. The particularly low electron concentration enables us to probe the temperature…
We investigate the structural and thermodynamic properties of high-pressure ice by incorporating quantum anharmonicity at a non-perturbative level. Quantum fluctuations reduce the critical pressure of the phase transition between phase VIII…
In this work, we used 20 nm thick CdTe/SnTe/CdTe [001] quantum wells to make 6- and 8-terminal nano-structures with the etched cross-junctions of sub-micron width with walls directed along the [10], [01], and [11] surface crystallographic…
By using the self-consistent Born approximation, we investigate topological phase transitions in double HgTe quantum wells (QWs) induced by the short-range impurities. Following the evolution of the density-of-states and the spectral…
Temperature dependences of thermoelectric power S(T) at $T>T_c$ of the Hg-based high temperature superconductors Hg$_{1-x}$R$_x$Ba$_2$Ca$_2$Cu$_3$O$_{8+\delta}$ (R=Re, Pb) have been analyzed with accounting for strong scattering of charge…
HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states.…
The electronic property and magnetic susceptibility of Ce$_3$Pd$_3$Bi$_4$ were systemically investigated from 18 K to 290 K for varying values of cell-volume using dynamic mean-field theory coupled with density functional theory. By…
Recently, ZrTe5 and HfTe5 are theoretically studied to be the most promising layered topological insulators since they are both interlayer weakly bonded materials and also with a large bulk gap in the single layer. It paves a new way for…
It has recently been shown that the electronic states in bulk gapless HgCdTe offer another realization of pseudo-relativistic three-dimensional particles in a condensed matter system. These single valley relativistic states, referred to as…
A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor BiTeI with giant Rashba spin splitting. In this work, the evolution of the electrical transport properties in BiTeI and BiTeBr is…
HgTe quantum wells possess remarkable physical properties as for instance the quantum spin Hall state and the 'single-valley' analog of graphene, depending on their layer thicknesses and barrier composition. However, double HgTe quantum…