Related papers: Impurity-driven intervalley spin-flip scattering-i…
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…
We develop a valley-dependent envelope function theory that can describe the effects of arbitrary configurations of interface steps and miscuts on the qubit relaxation time. For a given interface roughness, we show how our theory can be…
We study the spin-relaxation time in materials where a large spin-orbit coupling (SOC) is present which breaks the spatial inversion symmetry. Such a spin-orbit coupling is realized in zincblende structures and heterostructures with a…
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus…
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the transition from individual devices to large-scale processors,…
We investigated the spin dynamics of two-dimensional electrons in (001) GaAs/AlGaAs heterostructure using the time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic…
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of $^{29}$Si (natural or purified abundance), are…
Recent claims of an experimental demonstration of spontaneous spin polarisation in dilute electron gases \cite{young99} revived long standing theoretical discussions \cite{ceper99,bloch}. In two dimensions, the stabilisation of a…
Strong interest has arisen recently on low-dimensional systems with strong spin-orbit interaction due to their peculiar properties of interest for some spintronic applications. Here, the time evolution of the electron spin polarization of a…
We investigate the effective interaction between two localized spin impurities embedded in a frustrated spin-1/2 $J_1\!-\!J_2$ Heisenberg chain. Treating the impurity spins as classical moments coupled locally to the host, we combine…
Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using…
Designing new quantum materials with long-lived electron spin states urgently requires a general theoretical formalism and computational technique to reliably predict intrinsic spin relaxation times. We present a new, accurate and universal…
Spin current generation and manipulation remain the key challenge of spintronics, in which relativistic spinorbit coupling (SOC) play a ubiquitous role. In this letter, we demonstrate that hidden Rashba spins in the non-magnetic,…
Through First-Principles real-time Density-Matrix (FPDM) dynamics simulations, we investigate spin relaxation due to electron-phonon and electron-impurity scatterings with spin-orbit coupling in two-dimensional Dirac materials - silicene…
We considered the nonequlibrium spin dipoles induced around spin independent elastic scatterers by the intrinsic spin-Hall effect associated with the Rashba spin-orbit coupling. The normal to 2DEG spin polarization has been calculated in…
We utilize nanoscale spin valves with Pt spacer layers to characterize spin scattering in Pt. Analysis of the spin lifetime determined from our measurements indicates that the extrinsic Elliot-Yafet spin scattering is dominant at room…
Spin-relaxation is conventionally discussed using two different approaches for materials with and without inversion symmetry. The former is known as the Elliott-Yafet (EY) theory and for the latter the D'yakonov-Perel' (DP) theory applies,…
The temperature evolution of spin relaxation time, {\tau}sf, in degenerate silicon (Si)-based lateral spin valves is investigated by means of the Hanle effect measurements. {\tau}sf at 300 K is estimated to be 1.68+-0.03 ns and…