Related papers: Impurity-driven intervalley spin-flip scattering-i…
Spin relaxation in mesoscopic Ag wires in the diffusive transport regime is studied via nonlocal spin valve and Hanle effect measurements performed on permalloy/Ag lateral spin valves. The ratio between momentum and spin relaxation times is…
We present a theoretical study of elastic spin-dependent electron scattering caused by a charged impurity in the vicinity of a two-dimensional electron gas. We find that the symmetry properties of the spin-dependent differential scattering…
We have investigated spatio-temporal kinetics of electron spin polarization in semiconductor narrow 2D strip and explored the ability to manipulate spin relaxation. Information about spin of the conduction electrons and mechanisms of spin…
Despite the recent interest in "organic spintronics", the dominant spin relaxation mechanism of electrons or holes in an organic compound semiconductor has not been conclusively identified. There have been sporadic suggestions that it might…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum in the external magnetic field is considered. Several mechanisms of spin relaxation are shown to be relevant. The first one is attributed to phonon-assisted…
Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standard CMOS technology. The strained Si quantum well reduces the…
In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
Monolayer PtSe$_2$ is a semiconducting transition metal dichalcogenide characterized by an indirect band gap, space inversion symmetry, and high carrier mobility. Strong intrinsic spin-orbit coupling and the possibility to induce extrinsic…
We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of doped semiconductors. The Dresselhaus-type (i.e. allowed by bulk-inversion asymmetry) hopping terms are derived…
The D'yakonov-Perel' (DP) spin-relaxation mechanism has traditionally been associated with either relativistic spin-orbit coupling, which breaks space-inversion symmetry, or inhomogeneous magnetization, which breaks both time-reversal and…
The fundamental spin-orbit coupling and spin mixing in graphene and rippled honeycomb lattice materials silicene, germanene, stanene, blue phosphorene, arsenene, antimonene, and bismuthene is investigated from first principles. The…
Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001)…
We consider a one-dimensional (1D) wire along which single conduction electrons can propagate in the presence of two spin-1/2 magnetic impurities. The electron may be scattered by each impurity via a contact-exchange interaction and thus a…
Exploiting inversion symmetry breaking (ISB) in systems with strong spin-orbit coupling promises control of spin through electric fields - crucial to achieve miniaturization in spintronic devices. Delivering on this promise requires a…
Electron spin diffusion is investigated in monolayer MoS$_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this…
In order to describe correctly the interplay of extrinsic and intrinsic spin-orbit mechanisms to the spin Hall effect, it is necessary to consider different sources of spin relaxation. We take into account the spin relaxation time…
Electron spin relaxation in bulk III-V semiconductors is investigated from a fully microscopic kinetic spin Bloch equation approach where all relevant scatterings, such as, the electron--nonmagnetic-impurity, electron-phonon,…
The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a…