Related papers: Gate-voltage response of a one-dimensional ballist…
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is…
We report results on the rectification properties of a carbon nanotube (CNT) ring transistor, contacted by CNT leads, whose novel features have been recently communicated by Watanabe et al. [Appl. Phys. Lett. 78, 2928 (2001)]. This paper…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
We report the precise control of tunneling magnetoresistance (TMR) in devices of self-assembled core/shell Fe$_3$O$_4$/Co$_{1-x}$Zn$_x$Fe$_2$O$_4$ nanoparticles ($0\leq x\leq 1$). Adjusting the magnetic anisotropy through the content of…
We theoretically investigate tunneling magnetoresistance (TMR) devices, which are probing the spin-momentum coupled nature of surface states of the three-dimensional topological insulator Bi$_{2}$Se$_{3}$. Theoretical calculations are…
We performed studies of coherent electronic transport through a single walled carbon nanotube. In the calculations multiple scattering on the contacts and interference processes were taken into account. Conductance is a composition of…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic…
Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…
We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene.…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…
Two-dimensional (2D) van der Waals (vdW) magnets with layer-dependent magnetic states and/or diverse magnetic interactions and anisotropies have attracted extensive research interest. Despite the advances, a notable challenge persists in…
We consider a two-dimensional magnetic tunnel junction of the FM/I/QW(FM+SO)/I/N structure, where FM, I and QW(FM+SO) stand for a ferromagnet, an insulator and a quantum wire (QW) with both magnetic ordering and Rashba spin-orbit (SOC),…
We investigate transport through 6 to 10 nm thin epitaxial GaAs(001) barriers sandwiched between polycrystalline iron films. Apart from a pronounced tunneling magnetoresistance effect (TMR) at low magnetic fields we observe a distinct…
We study the effects of spin-flip scatterings on the time-dependent transport properties through a magnetic quantum dot attached to normal and ferromagnetic leads. The transient spin-dynamics as well as the steady-state tunneling…
We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear…
We investigate spin-dependent conductance across a magnetic tunnel junction (MTJ) including a ferromagnetic insulating barrier. The MTJ consists of two half-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes and La2NiMnO6…
We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain boundary junctions formed in epitaxial La(2/3)Ca(1/3)MnO(3) films deposited on SrTiO(3) bicrystals. For magnetic fields H applied parallel to…