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A high level of complex structure, or ``granularity'', has been observed in the distribution of infrared-obscuring material towards the Galactic Centre (GC), with a characteristic scale of 5arcsec - 15arcsec, corresponding to 0.2 - 0.6pc at…
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a…
The original Shockley-Read-Hall recombination statistics is extended to include recombination of localized excitations. The recombination is treated as a bimolecular process rather than a monomolecular recombination of excitons. The…
With angle resolved photoemission experiments and \emph{ab-initio} electronic structure calculations, the pentacene monolayers on Ag(110) and Cu(110) are compared and contrasted allowing the molecular orientation and an unambiguous…
Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response.…
Dislocation in (011)-oriented $\beta$-Ga$_2$O$_3$ substrates grown by the vertical Bridgman method was investigated using X-ray topography (XRT), combined with X-ray reticulography. Transmission XRT reveals dislocations lying on the (001)…
Electronic devices are extremely sensitive to defects in their constituent semiconductors, but locating electronic point defects in bulk semiconductors has previously been impossible. Here we apply scanning transmission electron microscopy…
For partially coherent light fields with random fluctuations, the intensity distributions and statistics have been proven to be more propagation robust compared with coherent light. However, its full potential in practical applications has…
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this…
Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the…
The potential of photometric methods for the identification of l, the degree of spherical surface harmonic of a pulsating star, is investigated with special emphasis on Stromgren photometry applied to delta Scuti and gamma Dor variables.…
Nanolithography based on local oxidation with a scanning force microscope has been performed on an undoped GaAs wafer and a Ga[Al]As heterostructure with an undoped GaAs cap layer and a shallow two-dimensional electron gas. The oxide growth…
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in…
We present a sensitive $\lambda$20cm VLA continuum survey of the Galactic center region using new and archival data based on multi-configuration observations taken with relatively uniform {\it uv} coverage. The high dynamic range images…
GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum…
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and…
The local optical field of a semiconductor micrograting (GaAs, 10x10 micro m) is recorded in the middle field region using an optical scanning probe in collection mode at constant height. The recorded image shows the micro-grating with high…
The southern Galactic plane has been mapped at optical wavelengths and at under one-arcsecond angular resolution by the VST Photometric Ha Survey of the Galactic plane and bulge (VPHAS+). Anticipating the release of a uniform photometric…
The diluted (Ga,Mn)As became a model ferromagnetic semiconductor, however there is still a disagreement on the source of its magnetism. The divergences arise from the results indicating that the holes mediated ferromagnetism reside in the…