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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…
The perturbations in the electron number density during recombination contributes to the Cosmic Microwave Background bispectrum through second order terms. Perturbations in the electron density can be a factor of ~5 larger than the baryon…
Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by…
Astrometric surveys offer us a method to search for elusive cosmic signatures, such as ultralight dark photon dark matter and gravitational waves, by observing the deflection to the apparent positions of the stars. The detection…
Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a…
Surface brightness asymmetries are a very common feature of stars. Among other effects they cause a difference between the projected barycentre and photocentre. The evolution of those surface features makes this difference time-dependent.…
The photoluminescence decay in amorphous semiconductors is described by power law $t^{-delta}$ at long times. The power-law decay of photoluminescence at long times is commonly observed but recent experiments have revealed that the…
We have performed HST imaging of a sample of 23 high-redshift (1.8<z<2.75) AGN, drawn from the COMBO-17 survey. The sample contains moderately luminous quasars (M_B ~ -23). The data are part of the GEMS imaging survey that provides high…
We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab-initio generalized…
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…
Deep optical images are often crowded with overlapping objects. This is especially true in the cores of galaxy clusters, where images of dozens of galaxies may lie atop one another. Accurate measurements of cluster properties require…
We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band $\mathbf{k} \cdot \mathbf{p}$ Hamiltonian to…
Electron injection from the tip of a scanning tunneling microscope into a p-type GaAs(110) surface have been used to induce luminescence in the bulk. Atomically-resolved photon maps revealed significant reduction of luminescence intensity…
We show that using coherent, spatially resolved spectroscopy, complex hybrid wave functions can be disentangled into the individual wave functions of the individual emitters. This way, detailed information on the coupling of the individual…
The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light helicity is inherently impossible with conventional…
The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped GaAs crystals at 77K on the concentration of background acceptor impurities and the level of excitation in the range from…
This study presents a nondestructive, high-resolution method for three-dimensional imaging of threading dislocations in beta-$Ga_{2}O_{3}$ (010) using phase-contrast microscopy (PCM). A one-to-one correspondence between dislocation…
We report on the electronic, structural, and optical properties of epitaxial GaSbBi films with varying Bi-concentration (up to 7%Bi) grown on semi-insulating GaAs(100) substrates. The 1 $\mu$m thick GaSbBi epilayers exhibit fully relaxed…
A spatial quantum model of spontaneous parametric down-conversion in nonlinear layered structures is developed expanding the interacting vectorial fields into monochromatic plane waves. A two-photon spectral amplitude depending on the…
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…