Related papers: Extracting inter-dot tunnel couplings between few …
We investigate the spectral and transport properties of parallel double-quantum-dot (DQD) system with interdot tunneling coupling in both the equilibrium and nonequilibrium cases. The special geometry of DQD system is considered, in which…
Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies,…
Quantum dots are frequently used as charge sensitive devices in low temperature experiments to probe electric charge in mesoscopic conductors where the current running through the quantum dot is modulated by the nearby charge environment.…
We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.…
An application of impedance measurement technique (IMT) for a detection of quantum tunneling in molecular structures is investigated. A charged particle which tunnels in a two-well potential is electrically coupled to a high-quality…
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of…
We show that two superconducting qubits interacting via a fixed transversal coupling can be decoupled by appropriately-designed microwave feld excitations applied to each qubit. This technique is useful for removing the effects of spurious…
The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double…
We study the impact of off-resonant tunneling and coherences on the electron pumping through quantum dots. Thereby, we focus on two electron-pump setups where lowest-order tunneling processes are suppressed and the pump is exclusively…
A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the…
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…
A top-gated single wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements…
Shuttling of single electrons in gate-defined silicon quantum dots is numerically simulated. A minimal gate geometry without explicit tunnel barrier gates is introduced, and used to define a chain of accumulation mode quantum dots, each…
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software…
Controlling long-range quantum correlations is central to quantum computation and simulation. In quantum dot arrays, experiments so far rely on nearest-neighbour couplings only, and inducing long-range correlations requires sequential local…
New results from tunneling spectroscopies on near optimally-doped single crystals of Tl_{2}Ba_{2}CuO_{6} (Tl-2201) junctions are presented. The superconductor-insulator-normal metal (SIN) tunnel junctions are obtained using the…
Generalized electrostatic quantum swap gate implemented in the chain of 2 double coupled quantum dots using single electron in semiconductor is presented in tight-binding simplistic model specifying both analytic and numerical results. The…
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate…
We introduce a new approach to the Josephson effect in SIS tunnel junctions. The Josephson coupling energy is calculated from the overlap of real space Cooper pair wavefunctions in two superconductors through an insulating barrier. It is…