Related papers: Extracting inter-dot tunnel couplings between few …
We report direct detection of charge-tunneling between a quantum dot and a superconducting island through radio-frequency gate sensing. We are able to resolve spin-dependent quasiparticle tunneling as well as two-particle tunneling…
Theoretical studies of the tunnelling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with…
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance.…
We use a many-body rate-equation approach to calculate the thermopower of a quantum dot in the presence of an exchange interaction. At temperatures much smaller than the single-particle level spacing, the known quantum jumps…
We report on tunneling experiment between two quantum Hall droplets separated by a nearly ideal tunnel barrier. The device is produced by cleaved edge overgrowth that laterally juxtaposes two two-dimensional electron systems across a high…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
A quantum dot (QD) system provides various quantum physics of nanostructures. So far, many types of semiconductor QD structures have been fabricated and investigated experimentally and analyzed theoretically. Presently, QD systems have…
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We…
We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a…
Resonant tunneling through identical potential barriers is a textbook problem in quantum mechanics. Its solution yields total transparency (100% tunneling) at discrete energies. This dramatic phenomenon results from coherent interference…
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates…
A system consisting of two independently contacted quantum dots with strong electrostatic interaction shows interdot Coulomb blockade when the dots are weakly tunnel coupled to their leads. It is studied experimentally how the blockade can…
The effect of long distance coherent tunneling (LDCT) on the charge and heat currents in serially coupled triple quantum dots (TQDs) connected to electrodes is illustrated by using a combination of the extended Hurbbard model and Anderson…
We experimentally demonstrate the real-time detection and control of correlated charge tunneling in a dynamically driven quantum dot. Specifically, we measure the joint distribution of waiting times between tunneling charges and show that…
This work combines state-of-the-art machine learning techniques with highest-level electronic structure calculations and full-dimensional quantum tunneling calculations to obtain a quantitative characterization of tunneling splittings for…
Polaron tunneling is a prominent example of a problem characterized by different energy scales, for which the standard quantum Monte Carlo methods face a slowdown problem. We propose a new quantum-tunneling Monte Carlo (QTMC) method which…
In quantum computation, information is processed by gates that must coherently couple separate qubits. In many systems the qubits are naturally coupled, but such an always-on interaction limits the algorithms that may be implemented.…
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus we are able to study…
We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy…
Recent experimental efforts have led to considerable interest in donor-based localized electron spins in Si as viable qubits for a scalable silicon quantum computer. With the use of isotopically purified $^{28}$Si and the realization of…