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The 71{\deg} stripe domain patterns of epitaxial BiFeO3 thin films are frequently being explored to achieve new functional properties, dissimilar from the BiFeO3 bulk properties. We show that in-plane switching and out-of-plane switching of…

Materials Science · Physics 2012-10-15 Florian Johann , Alessio Morelli , Ionela Vrejoiu

Strain and domain engineering offer powerful routes to control phase and domain stability in ferroelectric thin films. While most studies have focused on (100)-oriented growth, the impact of lower-symmetry orientations remains…

Materials Science · Physics 2026-05-11 Lan-Tien Hsu , Takeshi Nishimatsu , Anna Grünebohm

Thin epitaxial films of metals on insulating substrates are essential for many applications, as conducting layers, in magnetic devices or as templates for further growth. In this work, we report on the growth of epitaxial Ru films on…

Materials Science · Physics 2022-01-19 J. E. Prieto , E. M. Trapero , P. Prieto , E. García-Martín , G. D. Soria , P. Galán , J. de la Figuera

We demonstrate that the electronic properties of epitaxial SmN thin films can be effectively tuned during growth by controlling the synthesis parameters. By carefully adjusting these parameters, we are able to drive SmN from an insulating…

Materials Science · Physics 2025-07-10 K. D. Vallejo , V. Buturlim , Z. Cresswell , B. Campbell , B. G. Duersch , B. J. May , K. Gofryk

FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic…

Strongly Correlated Electrons · Physics 2019-08-27 Hisashi Inoue , Minyong Han , Linda Ye , Takehito Suzuki , Joseph. G. Checkelsky

The lanthanide (Ln) copper oxides of the general chemical formula Ln2CuO4 take two different crystal structures: K2NiF4(T) and Nd2CuO4(T'). La2CuO4 takes the T structure by high-temperature bulk processes. The "thermal expansion mismatch"…

Superconductivity · Physics 2015-06-24 M. Naito , A. Tsukada , T. Greibe , H. Sato

While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…

Materials Science · Physics 2026-05-04 Fumio Kawamura , Takeyoshi Onuma , Kazutaka Mitsuishi

Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition…

Materials Science · Physics 2018-01-25 Jike Lyu , Ignasi Fina , Raul Solanas , Josep Fontcuberta , Florencio Sanchez

The bulk quaternary equiatomic CoCrFeNi alloy is studied extensively in literature. Under experimental conditions, it shows a single-phase fcc structure and its physical and mechanical properties are similar to those of the quinary…

Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is…

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Shota Ono , Hiroyuki Shima

We present here experimental results obtained on Bi2FeCrO6 (BFCO) epitaxial films deposited by laser ablation directly on SrTiO3 substrates. It has been theoretically predicted, by Baettig and Spaldin, using first-principles density…

Materials Science · Physics 2009-11-11 Riad Nechache , Catalin Harnagea , Louis-Philippe Carignan , David Menard , Alain Pignolet

In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these…

The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose, high-quality fully strained La0.75Sr0.25CrO3 (LSCO)…

Mechanical strain can be used to control physical properties in materials. The experimental investigation of strain-induced effects at the nanoscale is of importance not only for its fundamental aspects, but also for the development of…

We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak…

The lattice of (001)-oriented BiFeO$_3$ epitaxial thin film has been identified by synchrotron x-ray diffraction. By choosing proper scattering zones containing the fixed (001) reflection, we have shown that low-symmetry phases similar to a…

Materials Science · Physics 2009-11-11 Guangyong Xu , H. Hiraka , G. Shirane , Jiefang Li , Junling Wang , D. Viehland

Ferroelectric films usually have phase states and physical properties very different from those of bulk ferroelectrics. Here we propose free-standing ferroelectric-elastic multilayers as a bridge between these two material systems. Using a…

Materials Science · Physics 2011-10-18 S. Prokhorenko , N. A. Pertsev

Solid phase epitaxy is a crystallization technique used to produce high quality thin films. Lateral solid phase epitaxy furthermore enables the realization of non-planar structures, which are interesting, e.g., in the field of spintronics.…

We investigate the hetero-epitaxial growth of thin film deposited on a (001) substrate via molecular dynamics simulations, using six fcc transition metals as our modeling systems. By studying the radial distribution function in the film…

Materials Science · Physics 2015-05-13 Pai-Yi Hsiao , Zhuo-Han Tsai , Jia-Hong Huang , Ge-Ping Yu
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