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We derive boundary conditions for the coupled spin-charge diffusion equations at a transmitting interface between two-dimensional electron systems with different strengths of the Rashba spin-orbit (SO) coupling $\alpha$, and an electric…

Materials Science · Physics 2009-11-11 Yaroslav Tserkovnyak , Bertrand I. Halperin , Alexey A. Kovalev , Arne Brataas

Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system by using a broadband spin pumping and inverse spin Hall effect measurement. An out-of-plane excitation geometry with application of external magnetic field…

Materials Science · Physics 2017-09-13 Surbhi Gupta , Rohit Medwal , Daichi Kodama , Kouta Kondou , YoshiChika Otani , Yasuhiro Fukuma

We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Ankur Sensharma , Sudhansu S. Mandal

The direct electrical method was used to study the behavior of the spin Hall effect in a magnetic field perpendicular to the injection current in aluminum samples with resistivities that differed by two orders of magnitude at a temperature…

Mesoscale and Nanoscale Physics · Physics 2023-12-15 Yu. N. Chiang , M. O. Dzyuba

Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport…

Materials Science · Physics 2009-11-13 Jing Li , Biqin Huang , Ian Appelbaum

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is…

Materials Science · Physics 2009-11-11 X. Lou , C. Adelmann , M. Furis , S. A. Crooker , C. J. Palmstrom , P. A. Crowell

The spin Hall effect of light, a spin-dependent transverse splitting of light at an optical interface, is intrinsically an incident-polarization-sensitive phenomenon. Recently, an approach to eliminate the polarization dependence by…

Optics · Physics 2021-09-10 Minkyung Kim , Dasol Lee , Junsuk Rho

This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin…

Mesoscale and Nanoscale Physics · Physics 2014-08-22 Takahiro Chiba , Gerrit E. W. Bauer , Saburo Takahashi

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS2 heterostructure at room temperature.…

Optical absorption of circularly polarized light is well known to yield an electron spin polarization in direct band gap semiconductors. We demonstrate that electron spins can even be generated with high efficiency by absorption of linearly…

We demonstrate a novel type of spin Hall nano-oscillator (SHNO) that allows for efficient tuning of magnetic auto-oscillations over an extended range of gigahertz frequencies, using bipolar direct currents at constant magnetic fields. This…

In the recent years it has been possible to achieve diode-like, non-reciprocal current-voltage response in Josephson junctions, despite the intrinsic symmetry of the Josephson effect itself. This is typically achieved by incorporating…

Superconductivity · Physics 2026-05-19 Debashree Nayak , Dimple Rani , Prasanjit Samal , Kartik Senapati

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…

Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling into graphene via proximity effect, and it has been predicted…

We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with up to 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular…

Mesoscale and Nanoscale Physics · Physics 2015-05-22 Yanhao Tang , Wei Xie , Krishna C. Mandal , John A. McGuire , Chih-Wei Lai

The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip,…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 A. G. Mal'shukov , L. Y. Wang , C. S. Chu , K. A. Chao

We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance…

Mesoscale and Nanoscale Physics · Physics 2017-05-23 Matija Karalic , Christopher Mittag , Thomas Tschirky , Werner Wegscheider , Klaus Ensslin , Thomas Ihn

Spin Hall effect, an electric generation of spin current, allows for efficient control of magnetization. Recent theory revealed that orbital Hall effect creates orbital current, which can be much larger than spin Hall-induced spin current.…

We present a methodology to address, from first principles, charge-spin interconversion in two-dimensional materials with spin-orbit coupling. Our study relies on an implementation of density functional theory based quantum transport…

Mesoscale and Nanoscale Physics · Physics 2022-01-05 Maedeh Rassekh , Hernán Santos , Andrea Latge , Leonor Chico , Saber Farjami Shayesteh , Juan Jose Palacios

An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these…

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