Related papers: Localized tip enhanced Raman spectroscopic study o…
Tip-Enhanced Raman Spectroscopy (TERS) combines Raman spectroscopy with scanning probe microscopy to overcome the spatial resolution limitation imposed by light diffraction, offering a primary optical technique for the comprehensive study…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires…
This article reviews the new developments in Tip-enhanced Raman scattering (TERS). The fundamental mechanisms underlying the Raman enhancement are discussed, including the role of the plasmonic character of the metallic tips, the nature of…
Raman forbidden modes and surface defect related Raman features in SnO_2 nanostructures carry information about disorder and surface defects which strongly influence important technological applications like catalysis and sensing. Due to…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
Tip-enhanced Raman spectroscopy (TERS) has reached nanometer spatial resolution for measurements performed at ambient conditions and sub-nanometer resolution at ultra high vacuum. Super-resolution (beyond the tip apex diameter) TERS has…
Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of…
Tip-enhanced Raman spectroscopy (TERS) is a powerful method for imaging vibrational motion and chemically characterizing surface-bound systems. Theoretical simulations of TERS images often consider systems in isolation, ignoring any…
Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and…
Contaminations in the formation of two-dimensional heterostructures can hinder or generate desired properties. Recent advancements have highlighted the potential of tip-enhanced Raman spectroscopy (TERS) for studying materials in the 2D…
Tip-enhanced Raman scattering (TERS) has emerged as a powerful tool to obtain subnanometer spatial resolution fingerprints of atomic motion. Theoretical calculations that can simulate the Raman scattering process and provide an unambiguous…
We report a detailed study of the strong near-field Raman scattering enhancement which takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the well-known first-order optical phonons of indium nitride,…
Tip-enhanced Raman spectroscopy (TERS) combines inelastic light scattering well below the diffraction limit down to the nanometer range and scanning probe microscopy and, possibly, spectroscopy. In this way, topographic and spectroscopic as…
Two-dimensional (2D) materials beyond graphene such as transition metal dichalcogenides (TMDs) have unique mechanical, optical and electronic properties with promising applications in flexible devices, catalysis and sensing. Optical imaging…
Single molecule detection, sequencing and conformational mapping of aptamers are important for improving medical and biosensing technologies and for better understanding of biological processes at the molecular level. We obtain vibrational…
The integration of advanced optoelectronic properties in nanoscale devices of group III nitride can be realized by understanding the coupling of charge carriers with optical excitations in these nanostructures. The native defect induced…
Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the…
An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic…
Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 micron has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN…
Herein we report experimental evidence of directional SERS from molecules situated inside a single nanowire-nanoparticle junction cavity. The emission was confined to a narrow range of wavevectors perpendicular to the axis of the cavity. In…