Contaminations in the formation of two-dimensional heterostructures can hinder or generate desired properties. Recent advancements have highlighted the potential of tip-enhanced Raman spectroscopy (TERS) for studying materials in the 2D semiconductor class. In this work, we investigate the influence of 50-200nm sized nanoprotuberances within a monolayer of MoSe2 deposited on hBN using nano-Raman spectroscopy, establishing correlations between the presence of localized contaminations and the observed hyperspectral variations. A figure of merit is established for the identification of surface impurities, based on MoSe2 peaks ratio. Notably, new spectral peaks were identified, which are associated with the presence of nanoprotuberances and may indicate contamination and oxidation.
@article{arxiv.2505.19224,
title = {Nano-Raman Spectroscopy Analysis of Nanoprotuberances in MoSe2},
author = {Jane Elisa Guimarães and Rafael Nadas and Rayan Alves and Wenjin Zhang and Takahiko Endo and Kenji Watanabe and Takashi Taniguchi and Riichiro Saito and Yasumitsu Miyata and Bernardo R. A. Neves and Ado Jorio},
journal= {arXiv preprint arXiv:2505.19224},
year = {2025}
}