Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence

Chenwei Tang; Shuai Jia; Weibing Chen; Jun Lou; Dmitri V. Voronine

Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence

Optics 2017-04-13 v2 Mesoscale and Nanoscale Physics

Authors: Chenwei Tang , Shuai Jia , Weibing Chen , Jun Lou , Dmitri V. Voronine

Abstract

Band gap tuning in two-dimensional transitional metal dichalcogenides (TMDs) is crucial in fabricating new optoelectronic devices. High resolution photoluminescence (PL) microscopy is needed for accurate band gap characterization. We performed tip-enhanced photoluminescence (TEPL) measurements of monolayer MoSe2 with nanoscale spatial resolution, providing an improved characterization of the band gap correlated with the topography compared with the conventional far field spectroscopy. We also observed PL shifts at the edges and investigated the spatial dependence of the TEPL enhancement factors.

Keywords

tip-enhanced photoluminescence monolayer MoSe2 nano-optical imaging band gap characterization transition metal dichalcogenides photoluminescence microscopy

Cite

@article{arxiv.1704.02396,
  title  = {Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence},
  author = {Chenwei Tang and Shuai Jia and Weibing Chen and Jun Lou and Dmitri V. Voronine},
  journal= {arXiv preprint arXiv:1704.02396},
  year   = {2017}
}

Comments

8 pages, 3 figures. Figure 2 update

Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence

Abstract

Keywords

Cite

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