Related papers: A non-volatile memory based on nonlinear magnetoel…

To face the challenges lying beyond current CMOS-based technology, new paradigms for information processing are required. Magnonics proposes to use spin waves to carry and process information, in analogy with photonics that relies on light…

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…

Magnetoelectric materials have the interesting property of exhibiting polarization induced by a magnetic field or magnetization induced by an electric field. As a consequence, a multitude of effects can be produced by means of controllable…

Nowadays a bit is no longer a mere abstraction but a physical quantity whose manipulation governs both operation of modern technologies and theoretical frontiers of fundamental science. In this work we propose a setup in which the memory…

Optical devices with metastable states controlled with light (optical flip-flops) are needed in data storage, signal processing and displays. Although non-volatile optical memory relying on structural phase transitions in chalcogenide…

Magnetic remanence - found in bar magnets or magnetic storage devices - is probably the oldest and most ubiquitous phenomenon underpinning technological applications of magnetism. It is a macroscopic non-equilibrium phenomenon: a remanent…

More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…

In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangements of magnets. The device is an active ring circuit comprising magnetic and electronic parts connected in series. The electric part…

Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…

In this work, we consider the possibility of using synthetic multiferroics comprising piezoelectric and magnetostrictive materials as an interconnect for nano magnetic logic circuits. The proposed interconnect resembles a parallel plate…

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the N\'eel vector of antiferromagnetic (AFM) materials, particularly to…

A magnetic vortex is a curling magnetic structure realized in a ferromagnetic disk, which is a promising candidate of a memory cell for future nonvolatile data storage devices. Thus, understanding of the stability and dynamical behaviour of…

We propose an intrinsic nonlinear spin magnetoelectric effect in magnetic materials, offering the potential of all-electric control of spin degree of freedom in centrosymmetric magnets, which reside outside of the current paradigm based on…

Displacive martensitic phase transition is potentially promising in semiconductor based data storage applications with fast switching speed. In addition to traditional phase transition materials, the recently discovered two-dimensional…

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…

The integration of computing with memory is essential for distributed, massively parallel, and adaptive architectures such as neural networks in artificial intelligence (AI). Accelerating AI can be achieved through photonic computing, but…

We describe and analyze a cellular nonlinear network based on magnetic nanostructures for image processing. The network consists of magneto-electric cells integrated onto a common ferromagnetic film - spin wave bus. The magneto-electric…

First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting…

This paper reports on a theoretical proposal for electrical creation of magnetic skyrmions on a thin-film specimen of a multiferroic chiral magnet by local application of an electric field, instead of an electric current, via an electrode…

Magnetics, ferroelectrics and multiferroics have attracted great attentions because they are not only extremely important for investigating fundamental physics, but also have important applications in information technology. Here, recent…