Related papers: A non-volatile memory based on nonlinear magnetoel…
Emulating various facets of computing principles of the brain can potentially lead to the development of neuro-computers that are able to exhibit brain-like cognitive capabilities. In this letter, we propose a magnetoelectronic neuron that…
A coding scheme is introduced, allowing to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the…
We suggest a realization of a bistable non-volatile memory capacitor (memcapacitor). Its design utilizes a strained elastic membrane as a plate of a parallel-plate capacitor. The applied stress generates low and high capacitance…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Highly efficient information processing in brain is based on processing and memory components called synapses, whose output is dependent on the history of the signals passed through them. Here we have developed an artificial synapse with…
Quantum annealing leverages quantum tunneling for non-local searches, thereby minimizing memory effects that typically arise from metastabilities. Nonetheless, recent work has demonstrated robust hysteresis in large-scale transverse-field…
Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a…
Deterministically controllable multi-state polarizations in ferroelectric materials are promising for the application of next-generation non-volatile multi-state memory devices. However, the achievement of multi-state polarizations has been…
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically…
Memory is a foundational concept across disciplines, from neurobiology and electronics to artificial intelligence and quantum gravity. In materials, memory effects typically arise from ferroic orders, such as ferroelectricity and…
We demonstrate the rotational memory effect in a multimode fiber. Rotating the incident wavefront around the fiber core axis leads to a rotation of the resulting pattern of the fiber output without significant changes in the resulting…
Multiferroics, defined for those multifunctional materials in which two or more kinds of fundamental ferroicities coexist, have become one of the hottest topics of condensed matter physics and materials science in recent years. The…
The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…
Magneto-electric effect in a multiferroic heterostructure film, i.e. a coupled ferromagnetic-ferroelectric thin film, has been investigated through the use of the Metropolis algorithm in Monte Carlo simulations. A classical Heisenberg model…
Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching…
As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies.…
The existence of a magnetodielectric (magnetocapacitance) effect is often used as a test for multiferroic behavior in new material systems. However, strong magnetodielectric effects can also be achieved through a combination of…
The realization of fully reconfigurable, voltage-controlled, and programmable on-chip magnonic devices is essential to fully harness the potential of spin waves for signal processing, logic and neuromorphic computing. Yet, existing…
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…
While quantum annealers have emerged as versatile and controllable platforms for experimenting on correlated spin systems, the important phenomenology of magnetic memory and hysteresis remain unexplored on hardware designed to escape…