Related papers: Study of the breakdown voltage of SiPMs
The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (Si PM). The method is based on…
This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (\sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical…
Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers, for instance, for the detection of photons in high energy physics and medical physics. In the present work, electrical characterizations of…
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…
Silicon Photo-Multipliers (SiPM) are regarded as novel photo-detectors to replace conventional Photo-Multiplier Tubes (PMTs). However, the breakdown voltage dependence on the ambient temperature results in a gain variation of $\sim$3$\%…
A new method to determine the breakdown voltage of SiPMs is presented. It is backed up by a DC model which describes the breakdown phenomenon by distinct avalanche turn-on ($V_{01}$) and turn off ($V_{10}$) voltages. It is shown that…
Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at…
The characterisation of radiation-damaged SiPMs is a major challenge, when the average time between dark counts approaches, or even exceeds, the signal decay time. In this note a collection of formulae is presented, which have been…
Methods are developed, which use the pulse-height spectra of SiPMs measured in the dark and illuminated by pulsed light, to determine the pulse shape, the dark-count rate, the gain, the average number of photons initiating a Geiger…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
This paper reports on the behaviour of Silicon Photomultiplier (SiPM) detectors under continuous light. Usually, the bias circuit of a SiPM has a resistor connected in series to it, which protects the sensor from drawing too high current.…
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $\Phi$ = 5e13 cm$^{-2}$. The cell has a pitch…
Accurate characterization of quantum yield is crucial to the reconstruction of energy depositions in silicon at the eV scale. This work presents a new method for experimentally calculating quantum yield using vacuum UV-sensitive silicon…
The gain-voltage dependence for SiPMs from V. Chmill et al., Study of the breakdown voltage of SiPMs, is reanalyzed and a non-linearity at the sub-percent level is observed. Simulations show that he non-linearity can be explained by the…
This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and…
The use of silicon photomultipliers (SiPMs) in imaging atmospheric Cherenkov telescopes is expected to extend the observation times of very-high-energy gamma-ray sources, particularly within the highest energy domain of 50-300 TeV, where…
This publication focuses on the study of silicon photomultipliers (SiPMs) in view of a reconstruction of the incident photon flux in the regime of highly non-linear response. SiPMs are semiconductor based light detectors compiled of…
We present experimental results of characterization of Silicon photomultipliers (SiPM) in a temperature range from 90~mK to 40~K. Two SiPMs, one from ONSEMI and one from Hamamatsu Photonics were tested. Operating voltage ranges, dark count…
We report on the measurement of the radiation hardness of silicon photomultipliers (SiPMs) manufactured by Fondazione Bruno Kessler in Italy (1 mm$^2$ and 6.2 mm$^2$), Center of Perspective Technology and Apparatus in Russia (1 mm$^2$ and…
Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few…