Related papers: Nanoripple formation on GaAs (001) surface by reve…
Rotated ripple structures (RRS) on sputter eroded surfaces are potential candidates for nanoscale wire fabrication. We show that the necessary condition for RRS formation is that the width of the collision cascade in the longitudinal…
Site-controlled quantum dots formed during the deposition of (Al)GaAs layers by metalorganic vapor-phase epitaxy on GaAs(111)B substrates patterned with inverted pyramids result in geometric and compositional self-ordering along the…
A study of ripple formation on sapphire surfaces by 300-2000 eV Ar+ ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is…
We investigate the morphologies of the Ge(001) surface that are produced by bombardment with a normally incident, broad argon ion beam at sample temperatures above the recrystallization temperature. Two previously-observed kinds of…
We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapour phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that…
The present study elucidates the correlation between the structural and optical properties of GaN nanowires grown on Si(111) substrate by plasma assisted molecular beam epitaxy (PA-MBE) technique under various growth conditions. GaN NWs…
A model for ripple formation on liquid surfaces exposed to an external laser or particle beam and a variable ground is developed. The external incident beam is hereby mechanically coupled to the liquid surface due to surface roughness.…
Structural and optical properties of MBE-grown GaAs(001) surface have been studied by reflection high-energy electron diffraction and single-wavelength ellipsometry under dynamic conditions of ramp heating after desorption of passivating…
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg…
The growth of NiO on GaN(00.1) substrates by plasma-assisted molecular beam epitaxy under oxygen rich conditions was investigated at growth temperatures between 100 $^{\circ}$C and 850 $^{\circ}$C. Epitaxial growth of NiO(111) with two…
Normal incidence 1 keV Ar$^+$ ion bombardment leads to amorphization and ultrasmoothing of Ge at room temperature, but at elevated temperatures the Ge surface remains crystalline and is unstable to the formation of self-organized nanoscale…
We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the…
Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much…
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and…
Pattern formation induced by wrinkling is a very common phenomenon exhibited in soft-matter substrates. In all these systems wrinkles develop in presence of compressively stressed thin films lying on compliant substrates. Here we…
Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer onto a (001)GaAs substrate prior to the epitaxial growth of…
We report on the morphological effects induced by the inhomogeneous absorption of cylindrically polarized femtosecond laser irradiation of silver (Ag) in sub-ablation conditions. A theoretical prediction of the role of surface plasmon…
Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal…
Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples…
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the…