Related papers: Micro-electromechanical memory bit based on magnet…
In this study, we develop a time-varying metasurface based on the bound states in the continuum (BIC) with variable conductors, to store electromagnetic waves. The storage and retrieval of electromagnetic waves are demonstrated numerically…
Hard magnetic materials belong to a novel class of soft active materials with the capability of quick, large, and complex deformation via applying an external actuation. They have an extensive range of potential applications in soft robots,…
In this work is presented a microbalance for single microparticle sensing based on resonating AFM cantilever. The variation of the resonator eigenfrequency is related to the particle mass positioned at the free apex of the cantilever. An…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
While memory effects emerge from systems of wildly varying length- and time-scales, the reduction of a complex system with many interacting elements into one simple enough to be understood without also losing the complex behavior continues…
The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two…
The prospect of efficient solid state refrigeration at room temperature is driving research into magnetic cooling engine design and magnetic phase transition-based refrigerants. In this Viewpoint an Ashby-style map of magnetic refrigerant…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
We suggest a realization of a bistable non-volatile memory capacitor (memcapacitor). Its design utilizes a strained elastic membrane as a plate of a parallel-plate capacitor. The applied stress generates low and high capacitance…
With the ever-increasing energy need to process big data, the realization of low-power computing technologies, such as superconducting logic and memories, has become a pressing issue. Developing fast and non-volatile superconducting memory…
The ultimate goal of multiferroic research is the development of new-generation non-volatile memory devices, the so-called magnetoelectric (ME) memories, where magnetic bits are controlled via electric fields without the application of…
The primary impediment to continued improvement of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the devices during switching of bits. One very promising…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Mechanical properties of biological samples have been imaged with a \textit{Force Feedback Microscope}. Force, force gradient and dissipation are measured simultaneously and quantitatively, merely knowing the AFM cantilever spring constant.…
A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods,…
Many living and artificial systems improve their fitness or performance by adapting to changing environments or diverse training data. However, it remains unclear how such environmental variation influences adaptation, what is learned in…
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
A scheme to squeeze the center-of-mass motional quadratures of a quantum mechanical oscillator below its standard quantum limit is proposed and analyzed theoretically. It relies on the dipole-dipole coupling between a magnetic dipole…
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…