Related papers: Memristive GaN ultrathin suspended membrane array
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon…
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical…
Resonant cavity LEDs (RCLEDs) exhibit excellent temporal and spatial coherence with narrow spectral linewidth and small divergence angle, which is of great importance for micro-displays. In this paper, we demonstrate a novel method to…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
We reported on the observation of extremely high-density ($>10^{14}$cm$^{-2}$) 2D electron gas in N-polar AlGaN/GaN heterostructures grown on sapphire substrates. Due to introducing the GaN/AlN superlattice (SL) back barrier between the GaN…
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic device. However, time domain analysis techniques exhibit their…
We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…
In this work we are investigating the effect of strain in ultrathin Mn-Ga thin films on the magnetic properties at room temperature. Two different Mn-Ga compositions of which one is furthermore doped with Co were grown on Cr buffered MgO…
Memristive neural networks (MNNs), which use memristors as neurons or synapses, have become a hot research topic recently. However, most memristors are not compatible with mainstream integrated circuit technology and their stabilities in…
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we…
Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…
We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on semi-insulating GaN substrates. Devices with a gate length of…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
Porous, atomically thin graphene membranes have interesting properties for filtration and sieving applications because they can accommodate small pore sizes, while maintaining high permeability. These membranes are therefore receiving much…
Magnetoresistance oscillations were observed on networks of superconducting ultrathin Nb nanowires presenting evidences of either thermal or quantum activated phase slips. The magnetic transport data, discussed in the framework of different…
In living organisms, information is processed in interconnected symphonies of ionic currents spiking through protein ion channels. As a result of dynamically switching their conductive states, ion channels exhibit a variety of…
The physics of electrons, photons, and their plasmonic interactions changes greatly when one or more dimensions are reduced down to the nanometer scale. For example, graphene shows unique electrical, optical, and plasmonic properties, which…
A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy…
Efficient thermal management is essential for the reliability of modern power electronics, where increasing device density leads to severe heat dissipation challenges. However, in thin-film systems, thermal transport is often compromised by…
We present a platform based upon silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Utilizing tensile stress and lithographic…