Related papers: Novel solid-phase epitaxy for multi-component mate…
We present a newly developed facility, comprised of a combinatorial laser molecular beam epitaxy system and an in-situ scanning tunneling microscopy (STM). This facility aims at accelerating the materials research in a highly efficient way,…
Epitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by using the hybrid physical chemical vapor deposition (HPCVD) technique. In order to obtain a high magnesium vapor pressure around the substrates, we used a special…
We successfully synthesized new layered iron oxypnictide Sr2CrO2(FeAs)2 by solid-state-reaction techniques. This is the first report on the Fe-substituted Sr2Mn3As2O2-type oxypnictides to our knowledge. A pellet of stoichiometric mixtures…
Co-doping of lanthanum and phosphorus in CaFe2As2 induces superconductivity at 45 K. This superconducting transition temperature is higher than the 38 K transition in Ba1-xKxFe2As2, which is the maximum found thus far among the 122 phases.…
We report on the isotropic pinning obtained in epitaxial Fe(Se,Te) thin films grown on CaF2 (001) substrate. High critical current density values larger than 1 MA/cm2 in self field in liquid helium are reached together with a very weak…
Single-crystal Heusler atomic-scale superlattices that have been predicted to exhibit perpendicular magnetic anisotropy and half-metallicity have been successfully grown by molecular beam epitaxy. Superlattices consisting of full-Heusler…
Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating…
We present a novel transparent conductive support structure for two-dimensional (2D) materials that provides an electronically passive 2D/3D interface while also enabling facile interfacial charge transport. This structure, which comprises…
We describe an instrument that exploits the ongoing revolution in synchrotron sources, optics, and detectors to enable in situ studies of metal-organic vapor phase epitaxy (MOVPE) growth of III-nitride materials using coherent x-ray…
The material and exact shape of a nanostructure determine its optical response, which is especially strong for plasmonic metals. Unfortunately, only a very few plasmonic metals are available, which limits the spectral range where these…
We present adaptive finite element simulations of dendritic and eutectic solidification in binary and ternary alloys. The computations are based on a recently formulated phase-field model that is especially appropriate for modelling…
Nanoporous metals possess unique properties attributed to their high surface area and interconnected nanoscale ligaments. They are mostly fabricated by wet synthetic methods involving solution-based dealloying processes whose purity is…
Great achievements have been made in alloying of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), which can allow tunable band gaps for practical applications in optoelectronic devices. However, telluride-based…
We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion…
The observation of superconductivity in the layered transition metal oxide NaxCoO2 y H2O (K. Takada et al., Nature 422, 53 (2003)) has caused a tremendous upsurge of scientific interest due to its similarities and its differences to the…
Two-dimensional (2D) ferromagnetic materials with high Curie temperature ($T_{\rm c}$) and large magnetic anisotropy energy (MAE) are critical for nanoscale spintronics but remain rare. We propose, via first-principles calculations, that…
We report the growth of high-quality epitaxial MgB2 thin films on (1102) Al2O3 and (001) SrTiO3 substrates by using a pulsed laser deposition technique. The thin films grown on Al2O3 substrates show a Tc of 39 K with a sharp transition…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
The SrFe2As2-xPx and CaFe2As2-yPy materials were prepared by a solid state reaction method. X-ray diffraction measurements indicate the single-phase samples can be successfully obtained for SrFe2As2-xPx and CaFe2As2-yPy samples. Clear…
The superconductor Sr4V2O6Fe2As2 with transition temperature at 37.2 K has been fabricated. It has a layered structure with the space group of p4/nmm, and with the lattice constants a = 3.9296Aand c = 15.6732A. The observed large…