Related papers: Flexible MgO barrier magnetic tunnel junctions

Enhancing the switching speed of oxide-based memristive devices at a low voltage level is crucial for their use as non-volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to…

Large magnetoresistance effect controlled by electric field rather than magnetic field or electric current is a preferable routine for designing low power consumption magnetoresistance-based spintronic devices. Here we propose an…

We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the…

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive…

Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a…

In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel…

We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…

Stochastic magnetic tunnel junctions (sMTJ) using low-barrier nanomagnets have shown promise as fast, energy-efficient, and scalable building blocks for probabilistic computing. Despite recent experimental and theoretical progress, sMTJs…

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT…

Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…

We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier. Through the Patterson function approach, the theory can…

Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life. Logic-in-memory structures using nano-devices…

Altermagnets demonstrate significant potential in spintronics due to their unique non-relativistic spin-splitting properties, yet altermagnetic devices still face challenges in efficiently switching logic states. Here, we report…

This paper introduces an analog-to-stochastic converter using a magnetic tunnel junction (MTJ) device for vision chips based on stochastic computation. Stochastic computation has been recently exploited for area-efficient hardware…

Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

Multiferroic tunnel junctions (MFTJs), integrating ferroelectric and ferromagnetic functionalities within a single nanoscale device, hold significant promise for non-volatile, multi-state memory and innovative computing paradigms. In…

The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make…

Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an…