Related papers: Dopant-controlled single-electron pumping through …
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
We study admittance and energy dissipation in an out-of-equlibrium single electron box. The system consists of a small metallic island coupled to a massive reservoir via single tunneling junction. The potential of electrons in the island is…
We propose a new mode of operation of an electron pump consisting of two weakly coupled quantum dots connected to reservoirs. An electron can be transferred within the device at zero bias voltage when it is subjected to electromagnetic…
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…
We report on measurements on a sample consisting of two nominally identical single-electron transistors the islands of which are coupled capacitively. One transistor at a time is operated as electron box. The remaining transistor is used as…
We have experimentally demonstrated pumping of Cooper pairs in a single-island mesoscopic structure. The island was connected to leads through SQUID (Superconducting Quantum Interference Device) loops. Synchronized flux and voltage signals…
Arrays of hybrid metal-semiconductor islands offer a new approach to quantum simulation, with key advantages over arrays of conventional quantum dots. Because the metallic component of these hybrid islands has a quasi-continuous level…
We consider the hybrid setup formed by a metallic dot, capacitively coupled to a superconducting island S connected to a bulk superconductor by a Josephson junction. Charge fluctuations in S act as a dynamical gate and overscreen the…
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…
We study the transmission through single and double ferromagnetic barriers on the surface of a topological insulator. By adjusting the gate voltage and magnetization oreintation, the ferromagnetic barrier can be tuned into various…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
We demonstrate experimentally that a hybrid single-electron transistor with superconducting leads and a normal-metal island can be refrigerated by an alternating voltage applied to the gate electrode. The simultaneous measurement of the dc…
We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low…
We study the electronic transport through a noncollinear single-electron spin-valve transistor. It consists of a small metallic island weakly coupled to two ferromagnetic leads with noncollinear magnetization directions. The electric…
In this Letter, we study the real-ime dynamics of single-electron pumpings. We modulate the left tunneling barrier along with the dot level but slightly changing the right barrier to operate the single-electron pumping device at zero bias.…
We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.…
We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
We report measurements on single-electron pumps, consisting of two metallic islands formed by three tunnel junctions in series. We focus on the linear-response conductance as a function of gate voltage and temperature of three samples with…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…