Related papers: Investigating the Temperature Effects on Resistive…
Achieving reliable resistive switching in oxide-based memristive devices requires precise control over conductive filament (CF) formation and behavior, yet the fundamental relationship between oxide material properties and switching…
Resistive switching (RS) effect observed in capacitor-like metal/insulator/metal junctions belongs to the most promising candidates for next generation of memory cell technology. It is based upon a sudden change of the junction resistance…
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of…
In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a…
The resistance of the electron gas at the interface between the two band insulators LaAlO3 (LAO) and SrTiO3 (STO) typically drops monotonically with temperature and R/T curves during cooling and warm-up look identical for large area…
Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of…
The temperature dependence of the response of a magnetic system to an applied field can be understood qualitatively by considering variations in the energy surface characterizing the system and estimated quantitatively with rate theory. In…
Magnetic refrigeration at room temperature is of great interest due to a long-term goal of making refrigeration more energy-efficient, less noisy and free of any environmentally hostile materials. A refrigerator utilizing an active magnetic…
The rapid growth of digital technology has driven the need for efficient storage solutions, positioning memristors as promising candidates for next-generation non-volatile memory (NVM) due to their superior electrical properties. Organic…
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial…
Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier…
This study shows the development and performance assessment of a novel set-up that enables the research of structural materials for fusion reactors, by making possible simultaneous application of temperature (up to 450$^{\circ}$C) and…
The influence of the time variation of the magnetic field, termed the magnetic field profile, on the performance of a magnetocaloric refrigeration device using the active magnetic regeneration (AMR) cycle is studied for a number of process…
We have grown and studied high quality SrRuO3 films grown by MBE as well as PLD. By changing the oxygen activity during deposition we were able to make SrRuO3 samples that were stoichiometric (low oxygen activity) or with ruthenium…
Stefan-Boltzmann's law indicates that far-field blackbody radiation scales at the fourth power of temperature. The temperature dependence of radiative heat transfer in the near field is expected to be very different due to the contribution…
The origin of room temperature (RT) ferromagnetism (FM) in Ni doped ZnO samples are systematically investigated through physical, optical, and magnetic properties of nanostructure, prepared by simple low-temperature wet chemical method.…
The temperature dependence of the thermal boundary resistivity is investigated in glass-embedded Ag particles of radius 4.5 nm, in the temperature range from 300 to 70 K, using all-optical time-resolved nanocalorimetry. The present results…
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory…
In recent years, photosensitive materials have been in huge demand because of their fascinating ability to convert absorbed photon energy to generate strain and henceforth tuning the physical properties. In this report we detect the…