Related papers: Investigating the Temperature Effects on Resistive…
Small scale renewable energy harvesting is an attractive solution to the growing need for power in remote technological applications. For this purpose, localized thermal gradients on-chip--created via radiative cooling--could be exploited…
Temperature influences the performance of two-dimensional materials in optoelectronic devices. Indeed, the optical characterization of these materials is usually realized at room temperature. Nevertheless most {\it ab-initio} studies are…
This work reports the first study of periodically poled piezoelectric film (P3F) lithium niobate (LiNbO3) resonators at cryogenic temperatures. We experimentally investigate the temperature dependency of resonant frequencies and quality…
Rutile GeO2 is an emerging ultra-wide band gap semiconductor (UWBG) that has demonstrated excellent potential for applications in power electronic devices. Alloys of rutile SnO2, a well-established UWBG semiconducting oxide, with GeO2 are…
For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It…
Free-standing silicon nitride (SiN) mechanical resonators are of central interests in applications such as temperature and mass sensing, and for fundamental optomechanical reasearch. Understanding thermal coupling between a membrane…
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…
Raman spectra of LCMO films grown on LAO (001), STO (001), and MgO (001) substrates were studied at different temperatures. The effect of temperature, doping level and strain on Raman spectra are discussed in detail. With decreasing…
We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to…
The sequence of prominent fractional quantum Hall states up to $\nu$=5/11 around $\nu$=1/2 in a high mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The…
Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability…
The electrical resistance of detonation nano-diamond powders was measured from liquid nitrogen temperature to room temperature and in relative humidity environments from around 10% to 100%. After sample exposures of several hours at 100%…
The X-ray diffraction, Raman and infrared spectroscopies and magnetic measurements were used to explore the correlated changes of the structure, lattice dynamics and magnetic properties of the LuFeO3 nanoparticles, which appear in…
In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
The temperature dependences of the energy and the width of a surface plasmon resonance are studied for copper nanoparticles 17 - 59 nm in size in the silica host matrix in the temperature interval 293 - 460 K. An increase of the temperature…
The temperature behaviour in the range 22\degree C to 500\degree C of the dielectric permittivity in the infrared range is investigated for CaF2, BaF2 and Al2O3 through reflectivity measurements. The dielectric permittivity is retrieved by…
We review the Raman shift method as a non-destructive optical tool to investigate the thermal conductivity and demonstrate the possibility to map this quantity with a micrometer resolution by studying thin film and bulk materials for…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…